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Radiation hardened design and analysis of radiation effect for scientific CMOS image sensor

Yuanfu Zhao, Liyan Liu, Xiaohui Liu, Xiaofeng Jin and Xiang Li

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 Corresponding author: Liu Liyan, Email: joyceliu123@126.com

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Abstract: A systemic solution for radiation hardened design is presented. Besides, a series of experiments have been carried out on the samples, and then the photoelectric response characteristic and spectral characteristic before and after the experiments have been comprehensively analyzed. The performance of the CMOS image sensor with the radiation hardened design technique realized total-dose resilience up to 300 krad(Si) and resilience to single-event latch up for LET up to110 MeV·cm2/mg.

Key words: CMOS image sensor (APS)dark currentdark signal response non-uniformitytotal dose effectssingle event effects



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Fig. 1.  The structure of a CMOS image sensor.

Fig. 2.  Structure of Cascode.

Fig. 3.  A new type of radiation hardened differential amplifier.

Fig. 4.  Typical latch-up route and its equivalent circuit.

Fig. 5.  Structure of DICE.

Fig. 6.  The curve of dark current in CMOS image sensor after radiation.

Fig. 7.  The distribution graph of dark current in CMOS image sensor before and after radiation.

Fig. 8.  Image under Ti ion exposure.

Fig. 9.  The average size of each spot resulting from three energetic particle strikes (LET(Ti) $=$ 22.1 MeV$\cdot$cm$^{2}$/mg,LET(Cl) $=$ 13.79MeV$\cdot$cm$^{2}$/mg,LET(S) $=$ 12 MeV$\cdot $cm$^{2}$/mg).

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    Received: 11 June 2015 Revised: Online: Published: 01 November 2015

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      Yuanfu Zhao, Liyan Liu, Xiaohui Liu, Xiaofeng Jin, Xiang Li. Radiation hardened design and analysis of radiation effect for scientific CMOS image sensor[J]. Journal of Semiconductors, 2015, 36(11): 114007. doi: 10.1088/1674-4926/36/11/114007 Y F Zhao, L Y Liu, X H Liu, X F Jin, X Li. Radiation hardened design and analysis of radiation effect for scientific CMOS image sensor[J]. J. Semicond., 2015, 36(11): 114007. doi: 10.1088/1674-4926/36/11/114007.Export: BibTex EndNote
      Citation:
      Yuanfu Zhao, Liyan Liu, Xiaohui Liu, Xiaofeng Jin, Xiang Li. Radiation hardened design and analysis of radiation effect for scientific CMOS image sensor[J]. Journal of Semiconductors, 2015, 36(11): 114007. doi: 10.1088/1674-4926/36/11/114007

      Y F Zhao, L Y Liu, X H Liu, X F Jin, X Li. Radiation hardened design and analysis of radiation effect for scientific CMOS image sensor[J]. J. Semicond., 2015, 36(11): 114007. doi: 10.1088/1674-4926/36/11/114007.
      Export: BibTex EndNote

      Radiation hardened design and analysis of radiation effect for scientific CMOS image sensor

      doi: 10.1088/1674-4926/36/11/114007
      More Information
      • Corresponding author: Liu Liyan, Email: joyceliu123@126.com
      • Received Date: 2015-06-11
      • Accepted Date: 2015-07-23
      • Published Date: 2015-01-25

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