Fig. 1.
(a) Top cross-sectional view of tapered TSV. (b) Two-tapered TSV system.
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| Citation: |
Song Liu, Guangbao Shan, Chengmin Xie, Xinrong Du. A transmission line-type electrical model for tapered TSV considering MOS effect and frequency-dependent behavior[J]. Journal of Semiconductors, 2015, 36(2): 024009. doi: 10.1088/1674-4926/36/2/024009
S Liu, G B Shan, C M Xie, X R Du. A transmission line-type electrical model for tapered TSV considering MOS effect and frequency-dependent behavior[J]. J. Semicond., 2015, 36(2): 024009. doi: 10.1088/1674-4926/36/2/024009.
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A transmission line-type electrical model for tapered TSV considering MOS effect and frequency-dependent behavior
doi: 10.1088/1674-4926/36/2/024009
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Abstract
The analytical model of voltage-controlled MOS capacitance of tapered through silicon via (TSV) is derived. To capture the frequency-dependent behavior of tapered TSV, the conventional analytical equations of RLCG for two-wire transmission lines are revised. With the adoption of MOS capacitance model and the revised RLCG analytical equations, a transmission line-type electrical model for tapered TSV is proposed finally. All the proposed models are validated by simulation tools, and a good correlation is obtained between the proposed models and simulations up to 100 GHz. With the proposed model, both the semiconductor phenomenon and frequency-dependent behavior of tapered TSV can be fully captured at high frequency, and the performance of tapered TSV can be evaluated accurately and conveniently prior to 3D IC design.-
Keywords:
- 3D IC,
- TSV,
- TSV electrical model,
- MOS effect,
- transmission line
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] -
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