SEMICONDUCTOR TECHNOLOGY

Non-ionic surfactant on particles removal in post-CMP cleaning

Mingbin Sun, Baohong Gao, Chenwei Wang, Yingxin Miao, Bo Duan and Baimei Tan

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 Corresponding author: Baimei Tan, E-mail: bmtan@hebut.edu.cn

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Abstract: The effect of a non-ionic surfactant on particles removal in post-CMP cleaning was investigated. By changing the concentration of the non-ionic surfactant, a series of experiments were performed on the 12 inch Cu pattern wafers in order to determine the best cleaning results. Then the effect of the surfactant on the reduction of defects and the removal of particles was discussed in this paper. What is more, the negative effect of a non-ionic surfactant was also discussed. Based on the experiment results, it is concluded that the non-ionic surfactant could cause good and ill effects at different concentrations in the post-CMP cleaning process. This understanding will serve as a guide to how much surfactant should be added in order to achieve excellent cleaning performance.

Key words: post-CMP cleaningnon-ionic surfactantparticle removalorganic contamination



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Fig. 1.  The schematic illustration of patterned copper wafer. (a) Pre-CMP. (b) Post-CMP.

Fig. 2.  The detection results of post-CMP cleaning with Cleaner A. (a) Single defect map. (b) The colloidal silica abrasive. (c) Organic particle.

Fig. 3.  The single defect map of wafer after post-CMP cleaning with (a) Cleaner B, (b) Cleaner C, (c) Cleaner D, (d) Cleaner E, (e) Cleaner F, and (f) Cleaner G.

Fig. 4.  The percentage of SiO$_{2}$ and organic particles on the wafers.

Fig. 5.  Schematic illustration of the removal of colloidal silica abrasives by the FA/O cleaner. (a) Chemical adsorption. (b) Physical adsorption.

Fig. 6.  The total numbers of defects for the different dilution ratios of non-ionic surfactant.

Fig. 7.  SEM image of the organic contamination.

Table 1.   The concentration of non-ionic surfactant.

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    Received: 27 June 2014 Revised: Online: Published: 01 February 2015

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      Mingbin Sun, Baohong Gao, Chenwei Wang, Yingxin Miao, Bo Duan, Baimei Tan. Non-ionic surfactant on particles removal in post-CMP cleaning[J]. Journal of Semiconductors, 2015, 36(2): 026002. doi: 10.1088/1674-4926/36/2/026002 M B Sun, B H Gao, C W Wang, Y X Miao, B Duan, B M Tan. Non-ionic surfactant on particles removal in post-CMP cleaning[J]. J. Semicond., 2015, 36(2): 026002. doi: 10.1088/1674-4926/36/2/026002.Export: BibTex EndNote
      Citation:
      Mingbin Sun, Baohong Gao, Chenwei Wang, Yingxin Miao, Bo Duan, Baimei Tan. Non-ionic surfactant on particles removal in post-CMP cleaning[J]. Journal of Semiconductors, 2015, 36(2): 026002. doi: 10.1088/1674-4926/36/2/026002

      M B Sun, B H Gao, C W Wang, Y X Miao, B Duan, B M Tan. Non-ionic surfactant on particles removal in post-CMP cleaning[J]. J. Semicond., 2015, 36(2): 026002. doi: 10.1088/1674-4926/36/2/026002.
      Export: BibTex EndNote

      Non-ionic surfactant on particles removal in post-CMP cleaning

      doi: 10.1088/1674-4926/36/2/026002
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      Project supported by the Specific Project Items No.2 in National Long-Term Technology Development Plan (No. 2009zx02308-003).

      More Information
      • Corresponding author: E-mail: bmtan@hebut.edu.cn
      • Received Date: 2014-06-27
      • Published Date: 2015-01-25

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