SEMICONDUCTOR PHYSICS

Effect of uniaxial strain on the structural, electronic and elastic properties of orthorhombic BiMnO3

Yang Pei and Haibin Wu

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 Corresponding author: Yang Pei, E-mail: ypei@semi.ac.cn

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Abstract: We study the elastic constants and electronic properties of orthorhombic BiMnO3 under uniaxial strain along the c-axis using the first-principles method. It is found that, beyond the range —0.025 < ε <0.055, the predicted stiffness constants cij cannot demand the Born stability criteria and the compliance constant s44 shows abrupt changes, which accompany phase transition. In addition, the results for magnetism moments and polycrystalline properties are also reported. Additionally, under compressive strain, a band gap transition from the indirect to the direct occurs within -0.019 < ε < -0.018. Furthermore, the response of the band gap of orthorhombic BiMnO3 to uniaxial strain is studied.

Key words: uniaxial strainorthorhombic BiMnO3first principle calculationBiMnO3



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Fig. 1.  (Color online) Structure of orthorhombic BiMnO$_{3}$; oxygen atoms at the orbit surface of the MnO$_{6}$ octahedra are labeled as O1 (O2), while the one at the top of the MnO$_{6}$ octahedra is labeled as O3.

Fig. 2.  (Color online) (a) Stiffness constants $c_{ij}$ and (b) compliance constant $s_{44}$ of orthorhombic BiMnO$_{3}$ under uniaxial strain from $\varepsilon$ $=$ $-0.030$ to $\varepsilon$ $=$ 0.080.

Fig. 3.  Anisotropy ratios $A_{\rm B}$ and $A_{\rm G}$, $A^{\rm U}$ of orthorhombic BiMnO$_{3}$ under uniaxial strain $-0.025$ $<$ $\varepsilon$ $<$ 0.055.

Fig. 4.  (a)-(e) The band structures of orthorhombic BiMnO$_{3}$ under $\varepsilon$ $=$ $-0.025$, $-0.019$, 0, 0.030 and 0.055, respectively. The VBM and the CBM are marked by black dots. (f) Variation of strain energy and band gap of orthorhombic BiMnO$_{3}$ under uniaxial strain. The band gaps are calculated using both LDA $+$ U (triangles) and HSE06 (circles).

Fig. 5.  Average bond length of Mn-O and Bi-O.

Fig. 6.  (Color online) (a) Total density of states of orthorhombic BiMnO$_{3}$. (b)-(f) Partial density of states of orthorhombic BiMnO$_{3}$. The top of the valence band is set as zero.

Table 1.   Polycrystalline properties at equilibrium state, including elastic stiffness constant $c_{ij}$ (GPa), bulk modulus $B_{\rm H}$ (GPa), shear modulus $G_{\rm H}$ (GPa), $B_{\rm H}$/$G_{\rm H}$ ratio, Young's modulus $E$ (GPa), Poisson's ratio $\nu$ and elastic anisotropy $A^{\rm U}$.

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    Received: 17 August 2014 Revised: Online: Published: 01 March 2015

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      Yang Pei, Haibin Wu. Effect of uniaxial strain on the structural, electronic and elastic properties of orthorhombic BiMnO3[J]. Journal of Semiconductors, 2015, 36(3): 032002. doi: 10.1088/1674-4926/36/3/032002 Y Pei, H B Wu. Effect of uniaxial strain on the structural, electronic and elastic properties of orthorhombic BiMnO3[J]. J. Semicond., 2015, 36(3): 032002. doi: 10.1088/1674-4926/36/3/032002.Export: BibTex EndNote
      Citation:
      Yang Pei, Haibin Wu. Effect of uniaxial strain on the structural, electronic and elastic properties of orthorhombic BiMnO3[J]. Journal of Semiconductors, 2015, 36(3): 032002. doi: 10.1088/1674-4926/36/3/032002

      Y Pei, H B Wu. Effect of uniaxial strain on the structural, electronic and elastic properties of orthorhombic BiMnO3[J]. J. Semicond., 2015, 36(3): 032002. doi: 10.1088/1674-4926/36/3/032002.
      Export: BibTex EndNote

      Effect of uniaxial strain on the structural, electronic and elastic properties of orthorhombic BiMnO3

      doi: 10.1088/1674-4926/36/3/032002
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      • Corresponding author: E-mail: ypei@semi.ac.cn
      • Received Date: 2014-08-17
      • Accepted Date: 2014-10-09
      • Published Date: 2015-01-25

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