SEMICONDUCTOR MATERIALS

A comparison between different ohmic contacts for ZnO thin films

Shadia J. Ikhmayies1, Naseem M. Abu El-Haija2 and Riyad N. Ahmad-Bitar2

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 Corresponding author: Shadia J. Ikhmayies, E-mail: shadia_ikhmayies@yahoo.com

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Abstract: There are several metals that form ohmic contacts for ZnO thin films, such as copper, aluminum and silver. The aim of this work is to make a comparison between these ohmic contacts. To achieve this purpose, polycrystalline ZnO thin films were prepared by the spray pyrolysis technique, and characterized by the I—V measurements at room temperature. Two strips of each metal were thermally evaporated on the surface of the film and measurements were first recorded in the dark and room light, then in the dark before and after annealing for Al, which was found to be the best in the set. Films with aluminum contacts gave the smallest resistivity, best ohmicity and they are slightly affected by light as required. On the other hand, copper was found to be the worst, and films with copper contacts gave the largest resistivity, worst ohmicity and they are the most affected by light. Annealing improved the aluminum contacts due to alloying and doping.

Key words: transparent conducting oxideohmic contactsannealingsolar cells



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Fig. 1.  SEM micrographs of one of the as-deposited ZnO thin films[24].

Fig. 2.  X-ray diffractogram of one of the as-deposited ZnO thin films.

Fig. 3.  $I$-$V$ plots and linear fits for ZnO thin films with different contacts. (a) In the dark. (b) In room light.

Fig. 4.  The $I$-$V$ plots and linear fits for two ZnO thin films with Al-contacts annealed in a nitrogen atmosphere at 250 C for 45 min. (a) Thickness $=$ 600 nm. (b) Thickness $=$ 370 nm.

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Table 1.   Fit parameters of the linear fits shown in Figure 3.

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Table 2.   The values of resistance, resistivity and the ratio of the dark to the light resistivity for ZnO thin films with different contacts.

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Table 3.   Fit parameters of the linear fits shown in Figure 4.

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Table 4.   The values of resistance, resistivity and the ratio of the as-deposited $\rho_{\rm as}$ to the annealed resistivity $\rho_{\rm ann}$ for ZnO thin films with Al contacts in the dark.

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    Received: 10 July 2014 Revised: Online: Published: 01 March 2015

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      Shadia J. Ikhmayies, Naseem M. Abu El-Haija, Riyad N. Ahmad-Bitar. A comparison between different ohmic contacts for ZnO thin films[J]. Journal of Semiconductors, 2015, 36(3): 033005. doi: 10.1088/1674-4926/36/3/033005 S. J. Ikhmayies, N. M. A. El-Haija, R. N. Ahmad-Bitar. A comparison between different ohmic contacts for ZnO thin films[J]. J. Semicond., 2015, 36(3): 033005. doi:  10.1088/1674-4926/36/3/033005.Export: BibTex EndNote
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      Shadia J. Ikhmayies, Naseem M. Abu El-Haija, Riyad N. Ahmad-Bitar. A comparison between different ohmic contacts for ZnO thin films[J]. Journal of Semiconductors, 2015, 36(3): 033005. doi: 10.1088/1674-4926/36/3/033005

      S. J. Ikhmayies, N. M. A. El-Haija, R. N. Ahmad-Bitar. A comparison between different ohmic contacts for ZnO thin films[J]. J. Semicond., 2015, 36(3): 033005. doi:  10.1088/1674-4926/36/3/033005.
      Export: BibTex EndNote

      A comparison between different ohmic contacts for ZnO thin films

      doi: 10.1088/1674-4926/36/3/033005
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      • Corresponding author: E-mail: shadia_ikhmayies@yahoo.com
      • Received Date: 2014-07-10
      • Accepted Date: 2014-10-09
      • Published Date: 2015-01-25

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