J. Semicond. > 2015, Volume 36 > Issue 4 > 044005, doi: 10.1088/1674-4926/36/4/044005
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SEMICONDUCTOR DEVICES

Collector optimization for improving the product of the breakdown voltage-cutoff frequency in SiGe HBT

Qiang Fu1, 2, , Wanrong Zhang1, Dongyue Jin1, Yanxiao Zhao1 and Lianghao Zhang1

+ Author Affiliations

 Corresponding author: Qiang Fu, E-mail: duduffqq@sohu.com

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Abstract: BVCESfT rather than BVCEOfT is employed in representing the limit of the product of the breakdown voltage-cutoff frequency in SiGe HBT for collector engineering design. Instead of a single decrease in collector doping to improve BVCESfT and BVCEOfT, a novel optimization collector doping design is presented to improve the well-known tradeoff between the breakdown voltage and cut-off frequency in SiGe HBT. As a result, the BVCESfT product is improved from 537.57 to 556.4 GHz·V, and the BVCEOfT product is improved from 309.51 to 326.35 GHz·V.

Key words: SiGe HBT, BVCES, BVCEO, fT, product



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Fig. 1.  Cross-section of SiGe HBT used in SILVACO/ATHENA.

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Fig. 2.  Doping profile of standard SiGe HBT used in SILVACO/ATHENA.

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Fig. 3.  Comparison of $f_{\rm T}$ versus $J_{\rm C}$ for standard HBTs with different collector doping concentrations.

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Fig. 4.  Comparison of electric field for standard HBTs with different collector doping concentrations.

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Fig. 5.  Comparison of ionization coefficient for standard HBTs with different collector doping concentrations.

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Fig. 6.  Doping profile of HBTs used in SILVACO/ATHENA including the standard ($N_{\rm C}$ $=$ 1 $\times$ 10$^{16}$ cm$^{-3})$ and optimized collector doping.

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Fig. 7.  Comparison of electric field for HBTs with the standard ($N_{\rm C}$~$=$ 1 $\times$ 10$^{16}$ cm$^{-3})$ and optimized collector doping concentration.

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Fig. 8.  Comparison of ionization coefficient for HBTs with the standard ($N_{\rm C}$ $=$ 1 $\times$ 10$^{16}$ cm$^{-3})$ and optimized collector doping concentration.

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Fig. 9.  Comparison of $f_{\rm T}$ versus $J_{\rm C}$ for HBTs with the standard ($N_{\rm C}$~$=$ 1 $\times$ 10$^{16}$ cm$^{-3})$ and optimized collector doping concentration.

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Table 1.   Parameters for standard HBTs with different collector doping concentrations.

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Table 2.   Parameters for standard HBTs with the standard ($N_{\rm C}$ $=$ 1 $\times$ 10$^{16}$ cm$^{-3})$ and optimized collector doping compared with Reference [1].

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    Received: 10 October 2014 Revised: Online: Published: 01 April 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(4): 044005
      Qiang Fu, Wanrong Zhang, Dongyue Jin, Yanxiao Zhao, Lianghao Zhang. Collector optimization for improving the product of the breakdown voltage-cutoff frequency in SiGe HBT[J]. Journal of Semiconductors, 2015, 36(4): 044005. doi: 10.1088/1674-4926/36/4/044005 Q Fu, W R Zhang, D Y Jin, Y X Zhao, L H Zhang. Collector optimization for improving the product of the breakdown voltage-cutoff frequency in SiGe HBT[J]. J. Semicond., 2015, 36(4): 044005. doi: 10.1088/1674-4926/36/4/044005.Export: BibTex EndNote
      Citation:
      Qiang Fu, Wanrong Zhang, Dongyue Jin, Yanxiao Zhao, Lianghao Zhang. Collector optimization for improving the product of the breakdown voltage-cutoff frequency in SiGe HBT[J]. Journal of Semiconductors, 2015, 36(4): 044005. doi: 10.1088/1674-4926/36/4/044005

      Q Fu, W R Zhang, D Y Jin, Y X Zhao, L H Zhang. Collector optimization for improving the product of the breakdown voltage-cutoff frequency in SiGe HBT[J]. J. Semicond., 2015, 36(4): 044005. doi: 10.1088/1674-4926/36/4/044005.
      Export: BibTex EndNote
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      Collector optimization for improving the product of the breakdown voltage-cutoff frequency in SiGe HBT

      doi: 10.1088/1674-4926/36/4/044005
      • 1.

        College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

      • 2.

        College of Physics, Liaoning University, Shenyang 110036, China

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos. 60776051, 61006059, 61006044), the Beijing Natural Science Foundation (Nos. 4082007, 4143059, 4142007, 4122014), and the Beijing Municipal Education Committee (Nos. KM200710005015, KM200910005001).

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      • Corresponding author: E-mail: duduffqq@sohu.com
      • Received Date: 2014-10-10
      • Accepted Date: 2014-12-16
      • Published Date: 2015-01-25

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