SEMICONDUCTOR DEVICES

InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells

Yongming Zhao1, 2, Jianrong Dong1, , Kuilong Li1, Yurun Sun1, Xulu Zeng1, Yang He1, 2, Shuzhen Yu1 and Hui Yang1

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 Corresponding author: Jianrong Dong, E-mail: jrdong2007@sinano.ac.cn

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Abstract: Lattice-matched InGaAs(P) photovoltaic devices were grown on InP substrates by metal-organic chemical vapor deposition. InGaAsP/InGaAs (1.07/0.74 eV) dual-junction (DJ) solar cells were fabricated and characterized by quantum efficiency and I-V measurements. The open circuit voltage, short circuit current density, fill factor, and efficiency of InGaAsP/InGaAs DJ solar cell are 0.977 V, 10.2 mA/cm2, 80.8%, and 8.94%, respectively, under one sun illumination of the AM 1.5D spectrum. For the InGaAsP/InGaAs DJ solar cell, with increasing concentration, the conversion efficiency first increases steadily and reaches 13% around 280 suns, and finally decreases due to the drop in fill factor at higher concentration ratios. These experimental results demonstrate the promising prospect of GaInP/GaAs/InGaAsP/InGaAs four-junction solar cells.

Key words: lattice-matchedInGaAs(P) solar cellsMOCVD



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Fig. 1.  The schematic structure of the InGaAsP/ InGaAs DJ solar cell.

Fig. 2.  IQE, EQE and surface reflectance of the InGaAsP/InGaAs DJ solar cell.

Fig. 3.  $J$-$V$ characteristics of the InGaAsP/InGaAs DJ solar cell.

Fig. 4.  (a) The schematic structure of the test module. (b) The efficiency of the InGaAsP/InGaAs DJ solar cell as a function of concentration ratio.

Fig. 5.  $V_{\rm oc}$ and FF as a function of the concentration ratio for the InGaAsP/InGaAs DJ solar cell.

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    Received: 19 September 2014 Revised: Online: Published: 01 April 2015

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      Yongming Zhao, Jianrong Dong, Kuilong Li, Yurun Sun, Xulu Zeng, Yang He, Shuzhen Yu, Hui Yang. InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells[J]. Journal of Semiconductors, 2015, 36(4): 044011. doi: 10.1088/1674-4926/36/4/044011 Y M Zhao, J R Dong, K L Li, Y R Sun, X L Zeng, Y He, S Z Yu, H Yang. InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells[J]. J. Semicond., 2015, 36(4): 044011. doi: 10.1088/1674-4926/36/4/044011.Export: BibTex EndNote
      Citation:
      Yongming Zhao, Jianrong Dong, Kuilong Li, Yurun Sun, Xulu Zeng, Yang He, Shuzhen Yu, Hui Yang. InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells[J]. Journal of Semiconductors, 2015, 36(4): 044011. doi: 10.1088/1674-4926/36/4/044011

      Y M Zhao, J R Dong, K L Li, Y R Sun, X L Zeng, Y He, S Z Yu, H Yang. InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells[J]. J. Semicond., 2015, 36(4): 044011. doi: 10.1088/1674-4926/36/4/044011.
      Export: BibTex EndNote

      InGaAsP/InGaAs tandem photovoltaic devices for four-junction solar cells

      doi: 10.1088/1674-4926/36/4/044011
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      Project supported by the National Natural Science Foundation of China (No. 61376065).

      More Information
      • Corresponding author: E-mail: jrdong2007@sinano.ac.cn
      • Received Date: 2014-09-19
      • Accepted Date: 2014-11-12
      • Published Date: 2015-01-25

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