SEMICONDUCTOR MATERIALS

High quality non-rectifying contact of ITO with both Ni and n-type GaAs

Qingsong Wang1, 2, Masao Ikeda1, Ming Tan1, Pan Dai1, 3, Yuanyuan Wu1, Shulong Lu1, and Hui Yang1

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 Corresponding author: Shulong Lu, E-mail: sllu2008@sinano.ac.cn

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Abstract: We report the specific contact resistance for ITO with both metal and a semiconductor. Good quality ITO was deposited by electron beam evaporation with the resistivity of 2.32 × 10-4 Ω ·cm and an averaged transmittance of 92.8% in the visible light region. The circular transmission line model (c-TLM) method was used to evaluate and compare the properties of the ITO/metal and ITO/semiconductor ohmic contacts. The lowest specific contact resistance of the ITO/Ni is 2.81 × 10-6 Ω ·cm2, while that of ITO/n-GaAs is 7 × 10-5 Ω ·cm2. This is the best ohmic contact between ITO and n-GaAs ever reported. These results suggest that good quality ITO has strong potential to be used to realize highly efficient solar cells.

Key words: ITOelectron beam evaporationITO/n-GaAsspecific contact resistance



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Fig. 1.  Graph of (a) resistivity, (b) carrier concentration and Hall mobility versus annealing (in N$_{2}$ atmosphere) temperature for ITO films grown by electron beam evaporation.

Fig. 2.  Graph of measured transmittance versus wavelength for ITO film grown by electron beam evaporation. Film thickness was approximately 100 nm.

Fig. 3.  Circular test patterns for ohmic contact characteristic, the outer radius $R =$ 110 nm, and the inner radius $r =$ 105, 100, 95, 90, 85, 80 $\mu $m, and the schematic of $I$-$V$ measurement by using high precision probes.

Fig. 4.  (Color online) Current-voltage characteristics of ITO/Ni structure annealing at 400-700 C.

Fig. 5.  The terminal resistance regarded as a function of ln($R/r$) to measure the contact resistivity $\rho_{\rm c}$.

Fig. 6.  ITO/Ni contact resistivity at various annealing (in N$_{2}$ atmosphere) temperatures.

Fig. 7.  The structure and the schematic of the touch between probes and Ni/ITO/n-GaAs.

Fig. 8.  (Color online) (a) Current-voltage characteristics of Ni/ITO/n-GaAs structure. (b) The contact resistivity between ITO and GaAs as a function of the annealing (in N$_{2}$ atmosphere) temperature.

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    Received: 22 October 2014 Revised: Online: Published: 01 May 2015

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      Qingsong Wang, Masao Ikeda, Ming Tan, Pan Dai, Yuanyuan Wu, Shulong Lu, Hui Yang. High quality non-rectifying contact of ITO with both Ni and n-type GaAs[J]. Journal of Semiconductors, 2015, 36(5): 053003. doi: 10.1088/1674-4926/36/5/053003 Q S Wang, M Ikeda, M Tan, P Dai, Y Y Wu, S L Lu, H Yang. High quality non-rectifying contact of ITO with both Ni and n-type GaAs[J]. J. Semicond., 2015, 36(5): 053003. doi: 10.1088/1674-4926/36/5/053003.Export: BibTex EndNote
      Citation:
      Qingsong Wang, Masao Ikeda, Ming Tan, Pan Dai, Yuanyuan Wu, Shulong Lu, Hui Yang. High quality non-rectifying contact of ITO with both Ni and n-type GaAs[J]. Journal of Semiconductors, 2015, 36(5): 053003. doi: 10.1088/1674-4926/36/5/053003

      Q S Wang, M Ikeda, M Tan, P Dai, Y Y Wu, S L Lu, H Yang. High quality non-rectifying contact of ITO with both Ni and n-type GaAs[J]. J. Semicond., 2015, 36(5): 053003. doi: 10.1088/1674-4926/36/5/053003.
      Export: BibTex EndNote

      High quality non-rectifying contact of ITO with both Ni and n-type GaAs

      doi: 10.1088/1674-4926/36/5/053003
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      Project supported by the National Natural Science Foundation (Nos.61176128, 61376081), the Knowledge Innovation Project of the CAS (No.Y2BAQ11001), and the SINANO SONY Joint Program (Nos.Y1AAQ11002, Y2AAQ11004).

      More Information
      • Corresponding author: E-mail: sllu2008@sinano.ac.cn
      • Received Date: 2014-10-22
      • Accepted Date: 2014-12-03
      • Published Date: 2015-01-25

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