SEMICONDUCTOR DEVICES

Preparation for Bragg grating of 808 nm distributed feedback laser diode

Yong Wang, Dandan Liu, Guoqing Feng, Zhen Ye, Zhanqi Gao and Xiaohua Wang

+ Author Affiliations

 Corresponding author: Yong Wang, E-mail: eeywang@gmail.com

PDF

Abstract: The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron microscopy and atomic force microscopy show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 nm, with perfect surface morphology, good fringe continuity and uniformity.

Key words: distributed feedback (DFB)laser diode (LD)gratingholographic photolithography



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
Fig. 1.  Relationship between coupling coefficient ($k)$ and duty cycle ($\sigma )$ of the second-order Bragg grating.

Fig. 2.  Relationship between normalized coupling coefficient ($kL)$ and duty cycle ($\sigma )$ of the second-order Bragg grating with different depths.

Fig. 3.  Optical path of the holographic photolithography system.

Fig. 4.  (a) Optical microscopy and (b) SEM images of grating.

Fig. 5.  (Color online) AFM image of grating.

DownLoad: CSV
DownLoad: CSV
DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2199 Times PDF downloads: 15 Times Cited by: 0 Times

    History

    Received: 13 October 2014 Revised: Online: Published: 01 May 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Yong Wang, Dandan Liu, Guoqing Feng, Zhen Ye, Zhanqi Gao, Xiaohua Wang. Preparation for Bragg grating of 808 nm distributed feedback laser diode[J]. Journal of Semiconductors, 2015, 36(5): 054008. doi: 10.1088/1674-4926/36/5/054008 Y Wang, Dandan Liu and A Liu, G Q Feng, Z Ye, Z Q Gao, X H Wang. Preparation for Bragg grating of 808 nm distributed feedback laser diode[J]. J. Semicond., 2015, 36(5): 054008. doi: 10.1088/1674-4926/36/5/054008.Export: BibTex EndNote
      Citation:
      Yong Wang, Dandan Liu, Guoqing Feng, Zhen Ye, Zhanqi Gao, Xiaohua Wang. Preparation for Bragg grating of 808 nm distributed feedback laser diode[J]. Journal of Semiconductors, 2015, 36(5): 054008. doi: 10.1088/1674-4926/36/5/054008

      Y Wang, Dandan Liu and A Liu, G Q Feng, Z Ye, Z Q Gao, X H Wang. Preparation for Bragg grating of 808 nm distributed feedback laser diode[J]. J. Semicond., 2015, 36(5): 054008. doi: 10.1088/1674-4926/36/5/054008.
      Export: BibTex EndNote

      Preparation for Bragg grating of 808 nm distributed feedback laser diode

      doi: 10.1088/1674-4926/36/5/054008
      Funds:

      Project supported by the National Natural Science Foundation of China (No.11474036), and the National Key Lab of High Power Semiconductor Lasers Foundations (No.9140C310103120C3101).

      More Information
      • Corresponding author: E-mail: eeywang@gmail.com
      • Received Date: 2014-10-13
      • Accepted Date: 2014-12-03
      • Published Date: 2015-01-25

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return