J. Semicond. > 2015, Volume 36 > Issue 5 > 054010, doi: 10.1088/1674-4926/36/5/054010
|

SEMICONDUCTOR DEVICES

Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system

Hamed Ghodsi and Hassan Kaatuzian

+ Author Affiliations

 Corresponding author: Hassan Kaatuzian, E-mail: hamed88@aut.ac.ir,hsnkato@aut.ac.ir

PDF

Abstract: In order to improve the performance of a pre-designed direct conversion terahertz detector which is implemented in a 0.25 μ m-SiGe-BiCMOS process, we propose some slight modifications in the bipolar section of the SiGe device physical design. Comparison of our new proposed device and the previously reported device is done by SILVACO TCAD software simulation and we have used previous experimentally reported data to confirm our software simulations. Our proposed modifications in device structural design show a present device responsivity improvement of about 10% from 1 to 1.1 A/W while the bandwidth improvement is about 218 GHz. The minimum noise equivalent power at detector output is increased by about 14.3% and finally power consumption per pixel at the maximum responsivity is decreased by about 5%.

Key words: terahertz, SiGe, HBT, physical structure, direct conversion detector



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
Fig. 1.  Some of possible square-law detector implementations[1].

DownLoad: Full-Size Img PowerPoint
Fig. 2.  Differential THz detector schematic of a single pixel.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  Experimental setup for performance characterization of terahertz detector[1].

DownLoad: Full-Size Img PowerPoint
Fig. 4.  Implemented detector details[1].

DownLoad: Full-Size Img PowerPoint
Fig. 5.  The new proposed transistor.

DownLoad: Full-Size Img PowerPoint
Fig. 6.  Output DC current ($V_{\rm CE}$ $=$ 1 V) for a single pixel. The solid line is our simulation result and the squares are our experimental results[1].

DownLoad: Full-Size Img PowerPoint
Fig. 7.  Responsivity for a single pixel of initial detector versus $V_{\rm BE}$ with optimized $V_{\rm CE}$. The solid line is our simulation result and the squares are our experimental results[1].

DownLoad: Full-Size Img PowerPoint
Fig. 8.  Responsivity for a single pixel of initial detector versus $V_{\rm CE}$ with optimized $V_{\rm BE}$. The solid line is our simulation result and the squares are our experimental results[1].

DownLoad: Full-Size Img PowerPoint
Fig. 9.  Responsivity versus $V_{\rm BE}$ when $V_{\rm CE}$ is the value which has the maximum responsivity. A comparison between new detector and initial detector.

DownLoad: Full-Size Img PowerPoint
Fig. 10.  Responsivity versus $V_{\rm CE}$ when $V_{\rm BE}$ is the value which has the maximum responsivity. A comparison between new detector and initial detector.

DownLoad: Full-Size Img PowerPoint
Fig. 11.  NEP versus RF frequency when $V_{\rm BE}$ and $V_{\rm CE}$ are such that we have maximum responsivity. A comparison between new detector and initial detector. (Experimental data about initial detector are also added[1]).

DownLoad: Full-Size Img PowerPoint
DownLoad: CSV
DownLoad: CSV

Table 1.   Modified characteristics of new proposed transistor.

DownLoad: CSV

Table 2.   Performance comparison table.

DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2504 Times PDF downloads: 14 Times Cited by: 0 Times

    History

    Received: 05 October 2014 Revised: Online: Published: 01 May 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2015  >  36(5): 054010
      Hamed Ghodsi, Hassan Kaatuzian. Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system[J]. Journal of Semiconductors, 2015, 36(5): 054010. doi: 10.1088/1674-4926/36/5/054010 H Ghodsi, H Kaatuzian. Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system[J]. J. Semicond., 2015, 36(5): 054010. doi: 10.1088/1674-4926/36/5/054010.Export: BibTex EndNote
      Citation:
      Hamed Ghodsi, Hassan Kaatuzian. Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system[J]. Journal of Semiconductors, 2015, 36(5): 054010. doi: 10.1088/1674-4926/36/5/054010

      H Ghodsi, H Kaatuzian. Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system[J]. J. Semicond., 2015, 36(5): 054010. doi: 10.1088/1674-4926/36/5/054010.
      Export: BibTex EndNote
      shu

      Physical characteristics modification of a SiGe-HBT semiconductor device for performance improvement in a terahertz detecting system

      doi: 10.1088/1674-4926/36/5/054010

      • Photonics Research Laboratory (P.R.L.), Electrical Engineering Department, Amir Kabir University of Technology, Hafez Avenue #424, Tehran, 15875-4413, Iran

      More Information
      • Corresponding author: E-mail: hamed88@aut.ac.ir,hsnkato@aut.ac.ir
      • Received Date: 2014-10-05
      • Accepted Date: 2014-11-25
      • Published Date: 2015-01-25

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return