SEMICONDUCTOR MATERIALS

Effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si

Shuai Feng1, 2, Lichuan Zhao1, Qingzhu Zhang1, Pengpeng Yang1, 2, Zhaoyun Tang1, Jiang Yan1, and Cinan Wu2

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 Corresponding author: Jiang Yan, Email: yanjiang@ime.ac.cn

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Abstract: The effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si films are investigated by implanting carbon of different doses into Si substrates before silicidation with two steps of rapid thermal annealing. Compared with the Ni0.95(Pt0.05)Si films without carbon implanting, the thermal stability of Ni0.95(Pt0.05)Si films with two carbon implant doses are improved 100 ℃ (1 × 1015cm-2) and 150 ℃ (3 × 1015cm-2

Key words: silicidethermal stabilitycarbon implantRTA



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Fig. 1.  Variations of sheet resistance of Ni$_{0.95}$(Pt$_{0.05}$)Si films at three carbon implant doses (1 $\times$ 10$^{15}$ cm$^{-2}$,3 $\times$ 10$^{15}$ cm$^{-2}$ and no carbon) with different RTA2 temperatures.

Fig. 2.  Top-view SEM images of Ni$_{0.95}$(Pt$_{0.05}$)-silicide films after silicidation at different RTA2 temperatures and carbon implant doses.

Fig. 3.  XRD diffractograms of both (a) no carbon samples and (b) 3 $\times$ 10$^{15}$ cm$^{-2}$ C samples at 500 C and the course of $R_{\rm sh}$ abrupt change.

Fig. 4.  Depth profile of carbon simulated by TCAD at 3 $\times$ 10$^{15}$ and 1 $\times$ 10$^{15}$ cm$^{-2}$ implant doses after silicidation at RTA2 600 C.

Fig. 5.  SEM images of cross section Ni$_{0.95}$(Pt$_{0.05})$-silicide for different carbon implant doses when $R_{\rm sh}$ is going to increase abruptly.

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    Received: 16 September 2014 Revised: Online: Published: 01 June 2015

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      Shuai Feng, Lichuan Zhao, Qingzhu Zhang, Pengpeng Yang, Zhaoyun Tang, Jiang Yan, Cinan Wu. Effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si[J]. Journal of Semiconductors, 2015, 36(6): 063004. doi: 10.1088/1674-4926/36/6/063004 S Feng, L C Zhao, Q Z Zhang, P P Yang, Z Y Tang, J Yan, C N Wu. Effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si[J]. J. Semicond., 2015, 36(6): 063004. doi: 10.1088/1674-4926/36/6/063004.Export: BibTex EndNote
      Citation:
      Shuai Feng, Lichuan Zhao, Qingzhu Zhang, Pengpeng Yang, Zhaoyun Tang, Jiang Yan, Cinan Wu. Effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si[J]. Journal of Semiconductors, 2015, 36(6): 063004. doi: 10.1088/1674-4926/36/6/063004

      S Feng, L C Zhao, Q Z Zhang, P P Yang, Z Y Tang, J Yan, C N Wu. Effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si[J]. J. Semicond., 2015, 36(6): 063004. doi: 10.1088/1674-4926/36/6/063004.
      Export: BibTex EndNote

      Effects of a carbon implant on thermal stability of Ni0.95(Pt0.05)Si

      doi: 10.1088/1674-4926/36/6/063004
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      • Corresponding author: Email: yanjiang@ime.ac.cn
      • Received Date: 2014-09-16
      • Accepted Date: 2015-01-10
      • Published Date: 2015-01-25

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