Fig. 1.
(Color online) $I_{\rm B}$ as a function of $V_{\rm BE}$ for varying total dose at different dose rates.
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| Citation: |
Qifeng Zhao, Yiqi Zhuang, Junlin Bao, Wei Hu. Model of radiation-induced gain degradation of NPN bipolar junction transistor at different dose rates[J]. Journal of Semiconductors, 2015, 36(6): 064007. doi: 10.1088/1674-4926/36/6/064007
Q F Zhao, Y Q Zhuang, J L Bao, W Hu. Model of radiation-induced gain degradation of NPN bipolar junction transistor at different dose rates[J]. J. Semicond., 2015, 36(6): 064007. doi: 10.1088/1674-4926/36/6/064007.
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Model of radiation-induced gain degradation of NPN bipolar junction transistor at different dose rates
doi: 10.1088/1674-4926/36/6/064007
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Abstract
Ionizing-radiation-induced current gain degradation in NPN bipolar junction transistors is due to an increase in base current as a result of recombination at the surface of the device. A model is presented which identifies the physical mechanism responsible for current gain degradation. The increase in surface recombination velocity due to interface states results in an increase in base current. Besides, changing the surface potential along the base surface induced by the oxide-trapped charges can also lead to an increased base current. By combining the production mechanisms of oxide-trapped charges and interface states, this model can explain the fact that the current gain degradation is more severe at a low dose rate than at a high dose rate. The radiations were performed in a Co60 source up to a total dose of 70 krad(Si). The low dose rate was 0.1 rad(Si)/s and the high dose rate was 10 rad(Si)/s. The model accords well with the experimental results. -
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