Magnetic polarization of a Mn-doped semiconductor nanostructure controlled by an external bias

P. Paradeo

doi:10.1088/1674-4926/36/7/073002

J. Semicond. > 2015, Volume 36 > Issue 7 > 073002, doi: 10.1088/1674-4926/36/7/073002

SEMICONDUCTOR MATERIALS

Magnetic polarization of a Mn-doped semiconductor nanostructure controlled by an external bias

P. Paradeo

+ Author Affiliations

Corresponding author: P. Paradeo, E-mail: paulo.paradeo@gmail.com

Abstract: The interplay between the electric and magnetic properties in a double quantum well heterostructure doped by magnetic ions is theoretically investigated. In this material, the magnetism is mediated by the hole gas. The total magnetic polarization of the system is controllable by an external applied bias. The device has two equilibrium states (symmetric and antisymmetric configurations). In the stable configuration (anti-ferromagnetic type), the particle spin distribution is reversed in the adjacent wells. The stability of the system is investigated by simulating the interaction of the hole gas with the light. By using an ab initio method, we estimate the switching time of the device.

Key words: magnetic polarization, quantum well, stability

References

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Fig. 1. (Color online) Panels a-b: Hole band edge profile for the spin up (continuous-green curve) and spin down (dashed-blue curve) particles. The crosses (circles) denote the energies of the first resonant levels in the well for the up (down) spin. The dashed-red line denotes the value of the chemical potential $\mu$. Panels c-d: Hole density for spin up (continuous-green curve) and spin down (dashed-blue curve) particles. The dotted-red line denotes the doping profile. Left panels: antisymmetric configuration. Right panels: symmetric configuration.

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Fig. 2. (Color online) Static magnetization of the device as a function of the bias potential. The green-dotted curve refers to the symmetric configuration and the blue-continuous curve to the antisymmetric configuration.

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Fig. 3. (Color online) Profile of the first minibands as a function of the parallel momentum $k_\perp$. The energy values for $k_\perp=0$ correspond to the resonant energies marked in the panels a-b of Figure 1. Left panel: antisymmetric configuration. Right panel: symmetric configuration.

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Fig. 4. (Color online) (a) Hole band profile for the spin up (continuous-green curve) and spin down (dashed-blue curve) particles. The crosses (circles) denote the energies of the first resonant levels in the well for the up (down) spin holes. The dashed-red line denotes the value of the chemical potential $\mu$. (b) Hole spin up density profile. The dotted-red line denotes the doping profile. The external potential is $V_{\rm b} =0.03$ eV.

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Fig. 5. (Color online) Switching time from zero bias to 30 meV.

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Table 1. The numerical values used in the simulations.

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Received: 30 August 2014 Revised: Online: Published: 01 July 2015

The interplay between the electric and magnetic properties in a double quantum well heterostructure doped by magnetic ions is theoretically investigated. In this material, the magnetism is mediated by the hole gas. The total magnetic polarization of the system is controllable by an external applied bias. The device has two equilibrium states (symmetric and antisymmetric configurations). In the stable configuration (anti-ferromagnetic type), the particle spin distribution is reversed in the adjacent wells. The stability of the system is investigated by simulating the interaction of the hole gas with the light. By using an ab initio method, we estimate the switching time of the device.

Magnetic polarization of a Mn-doped semiconductor nanostructure controlled by an external bias

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