SEMICONDUCTOR PHYSICS

Correlation between the structural, morphological, optical, and electrical properties of In2O3 thin films obtained by an ultrasonic spray CVD process

A. Bouhdjer, A. Attaf, H. Saidi, H. Bendjedidi, Y. Benkhetta and I. Bouhaf

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 Corresponding author: E-amil: adelbouhdjar@gmail.com

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Abstract: Indium oxide (In2O3) thin films are successfully deposited on glass substrate at different deposition times by an ultrasonic spray technique using Indium chloride as the precursor solution; the physical properties of these films are characterized by XRD, SEM, and UV-visible. XRD analysis showed that the films are polycrystalline in nature having a cubic crystal structure and symmetry space group Ia3 with a preferred grain orientation along the (222) plane when the deposition time changes from 4 to 10 min, but when the deposition time equals 13 min we found that the majority of grains preferred the (400) plane. The surface morphology of the In2O3 thin films revealed that the shape of grains changes with the change of the preferential growth orientation. The transmittance improvement of In2O3 films was closely related to the good crystalline quality of the films. The optical gap energy is found to increase from 3.46 to 3.79 eV with the increasing of deposition time from 4 to 13 min. The film thickness was varied between 395 and 725 nm. The film grown at 13 min is found to exhibit low resistivity (10-2 Ω·cm), and relatively high transmittance (~ 93%).

Key words: indium oxidedeposition timeultrasonic sprayoptical and electrical properties



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Fig. 1.  Evolution of the spectra of X-rays diffraction of In2O3 thin films for all deposition times.

Fig. 2.  Deposition time effect on the film texture.

Fig. 3.  SEM surface and EDS analysis of the In2O3 thin films deposited at various deposition time of (a) 4 min, (b) 7 min, (c) 10 min, and (d) 13 min.

Fig. 4.  Cross-sectional images of the In2O3 thin films deposited at various deposition time of (a) 4 min and (b) 13 min.

Fig. 5.  (Color online) Optical transmittance spectra of In2O3 thin films as a function of deposition time.

Fig. 6.  (Color online) Optical band gap energy for the In2O3 thin films deposited at various deposition time.

Fig. 7.  Electrical resistivity, and figure of merit of In2O3 thin film deposited at various deposition times.

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Table 1.   Grain size of In2O3 thin films as a function of deposition time (4-13 min).

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    Received: 27 January 2015 Revised: Online: Published: 01 August 2015

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      A. Bouhdjer, A. Attaf, H. Saidi, H. Bendjedidi, Y. Benkhetta, I. Bouhaf. Correlation between the structural, morphological, optical, and electrical properties of In2O3 thin films obtained by an ultrasonic spray CVD process[J]. Journal of Semiconductors, 2015, 36(8): 082002. doi: 10.1088/1674-4926/36/8/082002 A. Bouhdjer, A. Attaf, H. Saidi, H. Bendjedidi, Y. Benkhetta, I. Bouhaf. Correlation between the structural, morphological, optical, and electrical properties of In2O3 thin films obtained by an ultrasonic spray CVD process[J]. J. Semicond., 2015, 36(8): 082002. doi: 10.1088/1674-4926/36/8/082002.Export: BibTex EndNote
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      A. Bouhdjer, A. Attaf, H. Saidi, H. Bendjedidi, Y. Benkhetta, I. Bouhaf. Correlation between the structural, morphological, optical, and electrical properties of In2O3 thin films obtained by an ultrasonic spray CVD process[J]. Journal of Semiconductors, 2015, 36(8): 082002. doi: 10.1088/1674-4926/36/8/082002

      A. Bouhdjer, A. Attaf, H. Saidi, H. Bendjedidi, Y. Benkhetta, I. Bouhaf. Correlation between the structural, morphological, optical, and electrical properties of In2O3 thin films obtained by an ultrasonic spray CVD process[J]. J. Semicond., 2015, 36(8): 082002. doi: 10.1088/1674-4926/36/8/082002.
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      Correlation between the structural, morphological, optical, and electrical properties of In2O3 thin films obtained by an ultrasonic spray CVD process

      doi: 10.1088/1674-4926/36/8/082002
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      • Corresponding author: E-amil: adelbouhdjar@gmail.com
      • Received Date: 2015-01-27
      • Accepted Date: 2015-03-17
      • Published Date: 2015-01-25

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