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Design of broadband class-F power amplifier for multiband LTE handsets applications

Yaohua Zheng, Guohao Zhang, Ruiqing Zheng, Sizhen Li, Junming Lin and Sidi Chen

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 Corresponding author: Zhang Guohao, garyzhang@gdut.edu.cn

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Abstract: A broadband class-F power amplifier for multiband LTE handsets applications is developed across 2.3-2.7 GHz. The power amplifier maintains constant fundamental impedance at the output matching circuit which is operating for broadband. The nearly zero of second harmonic impedance and nearly infinity of third harmonic impedance are found for highly efficient class-F PA. The harmonic control circuits are immersed into the broadband output matching for fundamental frequency. For demonstration, the PA is implemented in InGaP/GaAs HBT process, and tested across the frequency range of 2.3-2.7 GHz using a long-term evolution signal. The presented PA delivers good performance of high efficiency and high linearity, which shows that the broadband class-F PA supports the multiband LTE handsets applications.

Key words: long term evolution (LTE)power amplifierbroadbandmultibandInGaP/GaAs HBT



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Fig1.  Impedance matching networks. (a) Two-section HPF type. (b) BPF type with LC-CL impedance transformation.

Fig2.  Simulated input impedances of the matching networks in Figure 1 over a broad frequency range.

Fig3.  Schematic of the broadband class-F PA.

Fig4.  Simulated input impedances $Z_{\rm eq}$ of the matching networks in Figure 1(b) over the third harmonic range.

Fig5.  Simulated impedance of the output matching.

Fig6.  Simulated voltage and current waveforms of the class-F operation.

Fig7.  HBT die photograph of the broadband class-F PA. Die size is 600 $\times$ 580 $\mu $m$^{2}$.

Fig8.  Photograph of test platform and the test PCB.

Fig9.  Measured and simulated $S$-parameters.

Fig10.  Measured performance of the broadband class-F PA across 2.3-2.7 GHz with a 10-MHz 12-RB QPSK LTE signal.

Fig11.  Measured LTE spectrum of the broadband class-F PA at the output power of 28 dBm at the center of 2.5 GHz.

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Table 1.   Performance comparison.

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    Received: 13 January 2015 Revised: Online: Published: 01 August 2015

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      Yaohua Zheng, Guohao Zhang, Ruiqing Zheng, Sizhen Li, Junming Lin, Sidi Chen. Design of broadband class-F power amplifier for multiband LTE handsets applications[J]. Journal of Semiconductors, 2015, 36(8): 085004. doi: 10.1088/1674-4926/36/8/085004 Y H Zheng, G H Zhang, R Q Zheng, S Z Li, J M Lin, S D Chen. Design of broadband class-F power amplifier for multiband LTE handsets applications[J]. J. Semicond., 2015, 36(8): 085004. doi: 10.1088/1674-4926/36/8/085004.Export: BibTex EndNote
      Citation:
      Yaohua Zheng, Guohao Zhang, Ruiqing Zheng, Sizhen Li, Junming Lin, Sidi Chen. Design of broadband class-F power amplifier for multiband LTE handsets applications[J]. Journal of Semiconductors, 2015, 36(8): 085004. doi: 10.1088/1674-4926/36/8/085004

      Y H Zheng, G H Zhang, R Q Zheng, S Z Li, J M Lin, S D Chen. Design of broadband class-F power amplifier for multiband LTE handsets applications[J]. J. Semicond., 2015, 36(8): 085004. doi: 10.1088/1674-4926/36/8/085004.
      Export: BibTex EndNote

      Design of broadband class-F power amplifier for multiband LTE handsets applications

      doi: 10.1088/1674-4926/36/8/085004
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      Project supported by the National Natural Science Foundation of China (No. 61404032).

      More Information
      • Corresponding author: Zhang Guohao, garyzhang@gdut.edu.cn
      • Received Date: 2015-01-13
      • Accepted Date: 2015-03-21
      • Published Date: 2015-01-25

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