SEMICONDUCTOR DEVICES

Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

Zheli Wang, Jianjun Zhou, Yuechan Kong, Cen Kong, Xun Dong, Yang Yang and Tangsheng Chen

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 Corresponding author: Wang Zheli, zlwang1990@163.com

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Abstract: A high-performance enhancement-mode (E-mode) gallium nitride (GaN)-based metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) that employs a 5-nm-thick aluminum gallium nitride (Al0.3Ga0.7N) as a barrier layer and relies on silicon nitride (SiN) passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide (Al2O3) by atomic layer deposition (ALD) on AlGaN surface would not increase the 2DEG density in the heterointerface. ALD Al2O3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length (LG) of 1μm showed a maximum drain current density (IDS) of 657 mA/mm, a maximum extrinsic transconductance (gm) of 187 mS/mm and a threshold voltage (Vth) of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of Al2O3 gate insulator. This provided an excellent way to realize E-mode AlGaN/GaN MIS-HEMTs with both high Vth and IDS.

Key words: enhancement-mode (E-mode)AlGaN/GaNmetal-insulator-semiconductor high electron mobility transistor (MIS-HEMT)atomic layer deposition (ALD)Al2O3



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Fig. 1.  Schematic cross-section view of the thin-barrier E-mode AlGaN/GaN MIS-HEMT.

Fig. 2.  Gate current characteristics of thin-barrier E-mode AlGaN/GaN HEMT and MIS-HEMT.

Fig. 3.  DC $I$-$V$ characteristics of thin-barrier E-mode AlGaN/GaN (a) HEMT and (b) MIS-HEMT.

Fig. 4.  The transfer characteristics of thin-barrier E-mode AlGaN/GaN HEMT and MIS-HEMT.

Fig. 5.  Three-terminal breakdown characteristics of thin-barrier E-mode AlGaN/GaN HEMT and MIS-HEMT with $L_{\rm GD}$ $=$ 1.5 $\mu $m and $L_{\rm DS}$ $=$ 4 $\mu $m.

Table 1.   Room-temperature Hall measurement before and after the passivation of SiN and Al$_{2}$O$_{3}$ on AlGaN/GaN heterostructure.

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    Received: 09 March 2015 Revised: Online: Published: 01 September 2015

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      Zheli Wang, Jianjun Zhou, Yuechan Kong, Cen Kong, Xun Dong, Yang Yang, Tangsheng Chen. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator[J]. Journal of Semiconductors, 2015, 36(9): 094004. doi: 10.1088/1674-4926/36/9/094004 Z L Wang, J J Zhou, Y C Kong, C Kong, X Dong, Y Yang, T S Chen. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator[J]. J. Semicond., 2015, 36(9): 094004. doi: 10.1088/1674-4926/36/9/094004.Export: BibTex EndNote
      Citation:
      Zheli Wang, Jianjun Zhou, Yuechan Kong, Cen Kong, Xun Dong, Yang Yang, Tangsheng Chen. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator[J]. Journal of Semiconductors, 2015, 36(9): 094004. doi: 10.1088/1674-4926/36/9/094004

      Z L Wang, J J Zhou, Y C Kong, C Kong, X Dong, Y Yang, T S Chen. Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator[J]. J. Semicond., 2015, 36(9): 094004. doi: 10.1088/1674-4926/36/9/094004.
      Export: BibTex EndNote

      Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

      doi: 10.1088/1674-4926/36/9/094004
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      Project supported by the National Natural Science Foundation of China (Nos. 61474101, 61106130) and the Natural Science Foundation of Jiangsu Province of China (No. BK20131072).

      More Information
      • Corresponding author: Wang Zheli, zlwang1990@163.com
      • Received Date: 2015-03-09
      • Accepted Date: 2015-03-31
      • Published Date: 2015-01-25

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