SEMICONDUCTOR INTEGRATED CIRCUITS

A full W-band low noise amplifier module for millimeter-wave applications

Hua Zhao, Hongfei Yao, Peng Ding, Yongbo Su, Xiaoxi Ning, Zhi Jin and Xinyu Liu

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Abstract: A full W-band low noise amplifier (LNA) module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed,optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification,two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7 dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz,and has a small signal gain above 21 dB. The noise figure is lower than 5.2 dB throughout the entire W-band (below 3 dB from 89 to 95 GHz) at room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain,low noise,and low DC power consumption.

Key words: W-bandlow noise amplifier (LNA)waveguide-to-microstrip probe transitionnoise figureLNA module



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.  Block diagram of the LNA module.

Figure 1.


.  Photograph of the W-band MMIC LNA.

Figure 2.


.  Measured S-parameters of the MMIC LNA.

Figure 3.


.  Measured NF and gain of the LNA MMIC chip.

Figure 4.


.  The configuration of the probe transition.

Figure 5.


.  3D model microstrip-to-waveguide structure

Figure 6.


.  Simulated result of the transition.

Figure 7.


.  Picture of the back-to-back structure.

Figure 8.


.  Measured results of the back-to-back transition structure.

Figure 9.


.  Picture of the LNA circuit.

Figure 10.


.  Measured NF and gain of the LNA model.

Figure 11.


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.   Dimension parameters of the proposed transition.

Table 1.

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Table 2.   Comparison with the reported LNA module.

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    Received: 03 March 2015 Revised: Online: Published: 01 September 2015

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      Hua Zhao, Hongfei Yao, Peng Ding, Yongbo Su, Xiaoxi Ning, Zhi Jin, Xinyu Liu. A full W-band low noise amplifier module for millimeter-wave applications[J]. Journal of Semiconductors, 2015, 36(9): 095001. doi: 10.1088/1674-4926/36/9/095001 H Zhao, H F Yao, P Ding, Y B Su, X X Ning, Z Jin, X Y Liu. A full W-band low noise amplifier module for millimeter-wave applications[J]. J. Semicond., 2015, 36(9): 095001. doi: 10.1088/1674-4926/36/9/095001.Export: BibTex EndNote
      Citation:
      Hua Zhao, Hongfei Yao, Peng Ding, Yongbo Su, Xiaoxi Ning, Zhi Jin, Xinyu Liu. A full W-band low noise amplifier module for millimeter-wave applications[J]. Journal of Semiconductors, 2015, 36(9): 095001. doi: 10.1088/1674-4926/36/9/095001

      H Zhao, H F Yao, P Ding, Y B Su, X X Ning, Z Jin, X Y Liu. A full W-band low noise amplifier module for millimeter-wave applications[J]. J. Semicond., 2015, 36(9): 095001. doi: 10.1088/1674-4926/36/9/095001.
      Export: BibTex EndNote

      A full W-band low noise amplifier module for millimeter-wave applications

      doi: 10.1088/1674-4926/36/9/095001
      Funds:

      Project supported by the Major Program of the National Natural Science Foundation of China (No. 61434006) and the National Natural Science Foundation of China (No. 61401457).

      • Received Date: 2015-03-03
      • Accepted Date: 2015-05-04
      • Published Date: 2015-01-25

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