SEMICONDUCTOR DEVICES

Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer

Xiang Li, Degang Zhao, Desheng Jiang, Ping Chen, Zongshun Liu, Jianjun Zhu, Ming Shi, Danmei Zhao and Wei Liu

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 Corresponding author: Zhao Degang,Email:

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Abstract: Electron leakage in GaAs-based separately confined heterostructure 808 nm laser diodes (SCH LDs) has a serious influence on device performance. Here, in order to reduce the energy of electrons injected into the quantum well (QW), an AlGaAs interlayer with a smaller Al component is added between the active region and the n-side waveguide. Numerical device simulation reveals that when the Al-composition of the AlGaAs interlayer and its thickness are properly elected, the electron leakage is remarkably depressed and the characteristics of LDs are improved, owing to the reduction of injected electron energy and the improvement of QW capture efficiency.

Key words: quantum welllaser diodeselectron leakageelectron energy



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Fig. 1.  The vertical structure design of reference and new LDs.

Fig. 2.  (Color online) Schematic energy band diagram of the (a) reference and (b) new structure LDs surrounding the active region.

Fig. 3.  (Color online) The electron current density along the epitaxial direction in reference (black) and new (red) LDs at 50 mA.

Fig. 4.  Electron leakage current density as a function of the Alcomposition of the inserted 0.2 m thick AlGaAs layer in LDs at 50 mA.

Fig. 5.  (Color online) Continuous-wave optical light output power and voltage of the reference and new GaAs-based laser diodes against driving current at room temperature.

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    Received: 18 April 2015 Revised: Online: Published: 01 January 2016

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      Xiang Li, Degang Zhao, Desheng Jiang, Ping Chen, Zongshun Liu, Jianjun Zhu, Ming Shi, Danmei Zhao, Wei Liu. Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer[J]. Journal of Semiconductors, 2016, 37(1): 014007. doi: 10.1088/1674-4926/37/1/014007 X Li, D G Zhao, D S Jiang, P Chen, Z S Liu, J J Zhu, M Shi, D M Zhao, W Liu. Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer[J]. J. Semicond., 2016, 37(1): 014007. doi: 10.1088/1674-4926/37/1/014007.Export: BibTex EndNote
      Citation:
      Xiang Li, Degang Zhao, Desheng Jiang, Ping Chen, Zongshun Liu, Jianjun Zhu, Ming Shi, Danmei Zhao, Wei Liu. Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer[J]. Journal of Semiconductors, 2016, 37(1): 014007. doi: 10.1088/1674-4926/37/1/014007

      X Li, D G Zhao, D S Jiang, P Chen, Z S Liu, J J Zhu, M Shi, D M Zhao, W Liu. Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer[J]. J. Semicond., 2016, 37(1): 014007. doi: 10.1088/1674-4926/37/1/014007.
      Export: BibTex EndNote

      Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer

      doi: 10.1088/1674-4926/37/1/014007
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      Project supported by the National Natural Science Foundation of China (Nos. 61377020, 61376089, 61223005, 61176126) and the National Science Fund for Distinguished Young Scholars (No. 60925017).

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