Fig. 1.
Schematic structure of MOCVD grown GaInP solar cell.
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| Citation: |
Hongbo Lu, Xinyi Li, Wei Zhang, Dayong Zhou, Lijie Sun, Kaijian Chen. Optimizing back surface field for improving Voc of(Al)GaInP solar cell[J]. Journal of Semiconductors, 2016, 37(10): 104004. doi: 10.1088/1674-4926/37/10/104004
H B Lu, X Y Li, W Zhang, D Y Zhou, L J Sun, K J Chen. Optimizing back surface field for improving Voc of(Al)GaInP solar cell[J]. J. Semicond., 2016, 37(10): 104004. doi: 10.1088/1674-4926/37/10/104004.
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Optimizing back surface field for improving Voc of(Al)GaInP solar cell
doi: 10.1088/1674-4926/37/10/104004
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Abstract
GaInP and AlGaInP solar cells were grown by metal organic chemical vapor deposition (MOCVD), and theoretical analysis demonstrated that hetero-interface recombination velocity plays an important role in the optimizing of cell performance, especially the interface between base layer and back surface field (BSF). Measurements including lattice-matched growth and pseudo-BSF were taken to optimize BSF design. Significant improvement of Voc in GaInP and AlGaInP solar cells imply that the measures we took are effective and promising for performance improvement in the next generation high efficiency solar cells.-
Keywords:
- back surface field,
- GaInP solar cells,
- MOCVD
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References
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