SEMICONDUCTOR DEVICES

Small-signal model parameter extraction for AlGaN/GaN HEMT

Le Yu1, 2, , Yingkui Zheng2, Sheng Zhang1, 2, Lei Pang2, Ke Wei2 and Xiaohua Ma1

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 Corresponding author: Yu Le, Email:yule@ime.ac.cn

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Abstract: A new 22-element small signal equivalent circuit model for the AlGaN/GaN high electron mobility transistor(HEMT) is presented. Compared with the traditional equivalent circuit model, the gate forward and breakdown conductions(Ggsf and Ggdf) are introduced into the new model to characterize the gate leakage current. Additionally, for the new gate-connected field plate and the source-connected field plate of the device, an improved method for extracting the parasitic capacitances is proposed, which can be applied to the small-signal extraction for an asymmetric device. To verify the model, S-parameters are obtained from the modeling and measurements. The good agreement between the measured and the simulated results indicate that this model is accurate, stable and comparatively clear in physical significance.

Key words: AlGaN/GaN HEMTsmall-signalparameter extractionmodeling



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Fig. 1.  Schematic cross-section of the developed AlGaN/GaN HEMT.

Fig. 2.  22-element small signal model of AlGaN/GaN HEMT.

Fig. 3.  (a) Cold pinch-off equivalent circuit for the AlGaN/GaN HEMT at low frequency. (b) Cold pinch-off equivalent circuit at high frequency.

Fig. 4.  Imaginary parts of measured $Y$-parameters of an $8\times 100$ $\mu $m AlGaN/GaN HEMT under cold pinch-off bias condition.

Fig. 5.  Parasitic inductances estimation from pinch-off Z-parameters of an $8\times 100$ $\mu $m AlGaN/GaN HEMT on SiC substrate.

Fig. 6.  Parasitic resistances estimation from cold forward $Z$-parameters of an $8\times 100$ $\mu $m AlGaN/GaN HEMT on SiC substrate.

Fig. 7.  (Color online) Comparison of (short dash) measured and (solid lines) simulated $S$-parameters for an 8 × 100 $\mu $m AlGaN/GaN HEMT ($V_{\rm gs}$ $=$ -2.5 V and $V_{\rm ds}$ $=$ 30 V).

Fig. 8.  (Color online) Comparison of (short dash) measured and (solid lines) simulated $S$-parameters without $G_{\rm gsf}$ and $G_{\rm gdf}$ considered. Freq: 0.1 to 10.5 GHz.

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Table 1.   Optimized values for the model elements of an 8 × 100 $\mu $m AlGaN/GaN HEMT.

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    Received: 02 July 2015 Revised: Online: Published: 01 March 2016

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      Le Yu, Yingkui Zheng, Sheng Zhang, Lei Pang, Ke Wei, Xiaohua Ma. Small-signal model parameter extraction for AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2016, 37(3): 034003. doi: 10.1088/1674-4926/37/3/034003 L Yu, Y K Zheng, S Zhang, L Pang, K Wei, X H Ma. Small-signal model parameter extraction for AlGaN/GaN HEMT[J]. J. Semicond., 2016, 37(3): 034003. doi: 10.1088/1674-4926/37/3/034003.Export: BibTex EndNote
      Citation:
      Le Yu, Yingkui Zheng, Sheng Zhang, Lei Pang, Ke Wei, Xiaohua Ma. Small-signal model parameter extraction for AlGaN/GaN HEMT[J]. Journal of Semiconductors, 2016, 37(3): 034003. doi: 10.1088/1674-4926/37/3/034003

      L Yu, Y K Zheng, S Zhang, L Pang, K Wei, X H Ma. Small-signal model parameter extraction for AlGaN/GaN HEMT[J]. J. Semicond., 2016, 37(3): 034003. doi: 10.1088/1674-4926/37/3/034003.
      Export: BibTex EndNote

      Small-signal model parameter extraction for AlGaN/GaN HEMT

      doi: 10.1088/1674-4926/37/3/034003
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      • Corresponding author: Yu Le, Email:yule@ime.ac.cn
      • Received Date: 2015-07-02
      • Accepted Date: 2015-09-16
      • Published Date: 2016-01-25

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