SEMICONDUCTOR DEVICES

Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors

Junjun Yuan1, 2, Zebo Fang2, , Yanyan Zhu1, , Bo Yao2, Shiyan Liu2, Gang He3 and Yongsheng Tan2

+ Author Affiliations

 Corresponding author: Fang Zebo, Email:csfzb@usx.edu.cn; Zhu Yanyan, Email:yyzhu@shiep.edu.cn

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Abstract: HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al(Pt)/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy.

Key words: high-k filmleakage currentcharge conduction



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Fig. 1.  Energy diagram of metal-oxide-semiconductor structure when (a) positive and (b) negative voltages are applied on the metal gate.

Fig. 2.  $I$-$V$ curves for Al/HfGdO/Ge capacitors.

Fig. 3.  (a), (b) PF, (c), (d) SE, and (e), (f) FN fitting plots for metal/ HfGdO/Ge capacitors with HfGdO films annealed at different temperatures: plots 1 and 2 are the films annealed at 200 and 400 ° in the Al/HfGdO/Ge capacitors; and, plots 3 and 4 are the films annealed at 200 and 400 ° in the Pt/HfGdO/Ge capacitors, under positive and negative gate bias.

Fig. 4.  (a) O 1s energy-loss spectrum for the sample of HfGdO films. (b) Band diagram of metal/HfGdO/Ge capacitors.

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    Received: 04 November 2015 Revised: Online: Published: 01 March 2016

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      Junjun Yuan, Zebo Fang, Yanyan Zhu, Bo Yao, Shiyan Liu, Gang He, Yongsheng Tan. Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors[J]. Journal of Semiconductors, 2016, 37(3): 034006. doi: 10.1088/1674-4926/37/3/034006 J J Yuan, Z B Fang, Y Y Zhu, B Yao, S Y Liu, G He, Y S Tan. Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors[J]. J. Semicond., 2016, 37(3): 034006. doi: 10.1088/1674-4926/37/3/034006.Export: BibTex EndNote
      Citation:
      Junjun Yuan, Zebo Fang, Yanyan Zhu, Bo Yao, Shiyan Liu, Gang He, Yongsheng Tan. Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors[J]. Journal of Semiconductors, 2016, 37(3): 034006. doi: 10.1088/1674-4926/37/3/034006

      J J Yuan, Z B Fang, Y Y Zhu, B Yao, S Y Liu, G He, Y S Tan. Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors[J]. J. Semicond., 2016, 37(3): 034006. doi: 10.1088/1674-4926/37/3/034006.
      Export: BibTex EndNote

      Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors

      doi: 10.1088/1674-4926/37/3/034006
      Funds:

      Project supported by the Natural Science Foundation of Shanghai(No.15ZR1418700), the Natural Science Foundation of China(Nos.51272159, 61405118), and the Natural Science Foundation of Zhejiang(Nos.LY15A040001, LQ13A040004).

      More Information
      • Corresponding author: Fang Zebo, Email:csfzb@usx.edu.cn; Zhu Yanyan, Email:yyzhu@shiep.edu.cn
      • Received Date: 2015-11-04
      • Accepted Date: 2015-12-25
      • Published Date: 2016-01-25

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