SEMICONDUCTOR DEVICES

Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications

Nacereddine Lakhdar1, 2 and Brahim Lakehal3

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 Corresponding author: Nacereddine Lakhdar, Email: nacereddine_l@hotmail.fr

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Abstract: We present an approach of GaAs MESFET incorporating the gate engineering effect to improve immunity against the short channel effects in order to enhance the scaling capability and the device performance for microwave frequency applications. In this context, a physics-based model for I-V characteristics and various microwave characteristics such as transconductance, cut-off frequency and maximum frequency of oscillation of submicron triple material gate (TM) GaAs MESFET are developed. The reduced short channel effects have also been discussed in combined designs i.e. TM, DM and SM in order to show the impact of our approach on the GaAs MESFETs-based device design. The proposed analytical models have been verified by their good agreement with 2D numerical simulations. The models developed in this paper will be useful for submicron and microwave analysis for circuit design.

Key words: gate engineeringGaAs MESFETcut-off frequencyshort channel effects (SCEs)work functionmodeling



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Fig. 1.  (a) Cross-sectional view of the analyzed TM GaAs MESFET. (b) Equivalent circuit representation for a drain current modeling.

Fig. 2.  Output characteristics for a channel length of 0.2 × 200 $\mu $m$^{2}$ TM GaAs MESFET compared with that of the SM and DM GaAs MESFETs.

Fig. 3.  (a) Variation of gate-source capacitance with respect to gate voltage at $V_{\rm ds}$ $=$ 6 V of TM GaAs MESFET. (b) Variation of gate-drain capacitance with respect to drain voltage at $V_{\rm gs}$ $=$ $-1$ V of TM GaAs MESFET.

Fig. 4.  Variation of cut-off frequency with drain voltage at $V_{\rm gs}$ $=$ $-1$ V of TM GaAs MESFET.

Fig. 5.  Variation of maximum frequency of oscillation with drain voltage at $V_{\rm gs}$ $=$ $-1$ V of TM GaAs MESFET.

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Table 1.   Parameters used for the calculation of results shown in Figures 2-5.

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    Received: 22 June 2015 Revised: Online: Published: 01 April 2016

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      Nacereddine Lakhdar, Brahim Lakehal. Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications[J]. Journal of Semiconductors, 2016, 37(4): 044002. doi: 10.1088/1674-4926/37/4/044002 N Lakhdar, B Lakehal. Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications[J]. J. Semicond., 2016, 37(4): 044002. doi: 10.1088/1674-4926/37/4/044002.Export: BibTex EndNote
      Citation:
      Nacereddine Lakhdar, Brahim Lakehal. Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications[J]. Journal of Semiconductors, 2016, 37(4): 044002. doi: 10.1088/1674-4926/37/4/044002

      N Lakhdar, B Lakehal. Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications[J]. J. Semicond., 2016, 37(4): 044002. doi: 10.1088/1674-4926/37/4/044002.
      Export: BibTex EndNote

      Effect of gate engineering in submicron GaAs MESFET for microwave frequency applications

      doi: 10.1088/1674-4926/37/4/044002
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      • Corresponding author: Email: nacereddine_l@hotmail.fr
      • Received Date: 2015-06-22
      • Accepted Date: 2015-10-30
      • Published Date: 2016-01-25

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