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Thermal analysis in high power GaAs-based laser diodes

Xueqin Gong, Shiwei Feng, Yuan Yue, Junwei Yang and Jingwei Li

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 Corresponding author: Feng Shiwei,Email:shwfeng@bjut.edu.cn

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Abstract: The thermal characteristics of 808 nm AlGaAs/GaAs laser diodes (LDs) are analyzed via electrical transient measurements and infrared thermography. The temperature rise and thermal resistance are measured at various input currents and powers. From the electrical transient measurements, it is found that there is a significant reduction in thermal resistance with increasing power because of the device power conversion efficiency. The component thermal resistance that was obtained from the structure function showed that the total thermal resistance is mainly composed of the thermal resistance of the sub-mount rather than that of the LD chip, and the thermal resistance of the sub-mount decreases with increasing current. The temperature rise values are also measured by infrared thermography and are calibrated based on a reference image, with results that are lower than those determined by electrical transient measurements. The difference in the results is caused by the limited spatial resolution of the measurements and by the signal being captured from the facet rather than from the junction of the laser diode.

Key words: laser diodestemperature risethermal resistanceelectrical transient measurementinfrared thermography



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Fig. 1.  (a) Schematic of LD structure and (b) PIV characteristic curves of a GaAs-based LD.

Fig. 2.  (a) Forward voltage as a function of temperature at a current of 5 mA and (b) LD temperature rise, thermal resistance and power conversion efficiency as a function of the electrical input power.

Fig. 3.  (Color online) (a) Differential structure function at input current of 0.6 A and (b) component thermal resistance as a function of power.

Fig. 4.  Temperature characteristics for different materials measured using the thermal camera.

Fig. 5.  (Color online) (a) Thermal image of LD at current of 1.5 A. (b) Horizontal temperature profile and (c) vertical profile of the LD through the active region.

Fig. 6.  Temperature rise measured by electrical transient measurement and infrared thermography.

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    Received: 13 June 2015 Revised: Online: Published: 01 April 2016

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      Xueqin Gong, Shiwei Feng, Yuan Yue, Junwei Yang, Jingwei Li. Thermal analysis in high power GaAs-based laser diodes[J]. Journal of Semiconductors, 2016, 37(4): 044011. doi: 10.1088/1674-4926/37/4/044011 X Q Gong, S W Feng, Y Yue, J W Yang, J W Li. Thermal analysis in high power GaAs-based laser diodes[J]. J. Semicond., 2016, 37(4): 044011. doi: 10.1088/1674-4926/37/4/044011.Export: BibTex EndNote
      Citation:
      Xueqin Gong, Shiwei Feng, Yuan Yue, Junwei Yang, Jingwei Li. Thermal analysis in high power GaAs-based laser diodes[J]. Journal of Semiconductors, 2016, 37(4): 044011. doi: 10.1088/1674-4926/37/4/044011

      X Q Gong, S W Feng, Y Yue, J W Yang, J W Li. Thermal analysis in high power GaAs-based laser diodes[J]. J. Semicond., 2016, 37(4): 044011. doi: 10.1088/1674-4926/37/4/044011.
      Export: BibTex EndNote

      Thermal analysis in high power GaAs-based laser diodes

      doi: 10.1088/1674-4926/37/4/044011
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      Project supported by the National Natural Science Foundation of China (Nos. 61376077, 61201046, 61204081).

      More Information
      • Corresponding author: Feng Shiwei,Email:shwfeng@bjut.edu.cn
      • Received Date: 2015-06-13
      • Accepted Date: 2015-09-21
      • Published Date: 2016-01-25

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