SEMICONDUCTOR DEVICES

A novel measuring method of clamping force for electrostatic chuck in semiconductor devices

Kesheng Wang1, 2, , Jia Cheng1, Yin Zhong1, 3 and Linhong Ji1

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 Corresponding author: Wang Kesheng,Email:wks11@mails.tsinghua.edu.cn

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Abstract: Electrostatic chucks are one of the core components of semiconductor devices. As a key index of electrostatic chucks, the clamping force must be controlled within a reasonable range. Therefore, it is essential to accurately measure the clamping force. To reduce the negative factors influencing measurement precision and repeatability, this article presents a novel method to measure the clamping force and we elaborate both the principle and the key procedure. A micro-force probe component is introduced to monitor, adjust, and eliminate the gap between the wafer and the electrostatic chuck. The contact force between the ruby probe and the wafer is selected as an important parameter to characterize de-chucking, and we have found that the moment of de-chucking can be exactly judged. Moreover, this article derives the formula calibrating equivalent action area of backside gas pressure under real working conditions, which can effectively connect the backside gas pressure at the moment of de-chucking and the clamping force. The experiments were then performed on a self-designed measuring platform. The de-chucking mechanism is discussed in light of our analysis of the experimental data. Determination criteria for de-chucking point are summed up. It is found that the relationship between de-chucking pressure and applied voltage conforms well to quadratic equation. Meanwhile, the result reveals that actual de-chucking behavior is much more complicated than the description given in the classical empirical formula.

Key words: electrostatic chuckwaferclamping forcede-chuckingmeasuring method



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Fig. 1.  Schematic diagram of the new measuring method.

Fig. 2.  Schematic diagram of the calibration of the equivalent action area of the backside gas pressure. (a) Normal state. (b) Inversion state.

Fig. 3.  The electrostatic chuck used in the experiments.

Fig. 4.  Experimental platform.

Fig. 5.  Typical relationship between contact force and backside gas pressure.

Fig. 6.  Non-typical relationship between contact force and backside gas pressure.

Fig. 7.  Box plots of backside gas pressure at the moment of dechucking with the change of applied voltage.

Fig. 8.  Fitting curve of experimental data.

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    Received: 25 November 2015 Revised: Online: Published: 01 April 2016

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      Kesheng Wang, Jia Cheng, Yin Zhong, Linhong Ji. A novel measuring method of clamping force for electrostatic chuck in semiconductor devices[J]. Journal of Semiconductors, 2016, 37(4): 044012. doi: 10.1088/1674-4926/37/4/044012 K S Wang, J Cheng, Y Zhong, L H Ji. A novel measuring method of clamping force for electrostatic chuck in semiconductor devices[J]. J. Semicond., 2016, 37(4): 044012. doi: 10.1088/1674-4926/37/4/044012.Export: BibTex EndNote
      Citation:
      Kesheng Wang, Jia Cheng, Yin Zhong, Linhong Ji. A novel measuring method of clamping force for electrostatic chuck in semiconductor devices[J]. Journal of Semiconductors, 2016, 37(4): 044012. doi: 10.1088/1674-4926/37/4/044012

      K S Wang, J Cheng, Y Zhong, L H Ji. A novel measuring method of clamping force for electrostatic chuck in semiconductor devices[J]. J. Semicond., 2016, 37(4): 044012. doi: 10.1088/1674-4926/37/4/044012.
      Export: BibTex EndNote

      A novel measuring method of clamping force for electrostatic chuck in semiconductor devices

      doi: 10.1088/1674-4926/37/4/044012
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      Project supported by No. 02 National Science and Technology Major Project of China (No. 2011ZX02403-004).

      More Information
      • Corresponding author: Wang Kesheng,Email:wks11@mails.tsinghua.edu.cn
      • Received Date: 2015-11-25
      • Accepted Date: 2015-12-22
      • Published Date: 2016-01-25

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