SEMICONDUCTOR INTEGRATED CIRCUITS

DOIND: a technique for leakage reduction in nanoscale domino logic circuits

Ambika Prasad Shah1, Vaibhav Neema1 and Shreeniwas Daulatabad2

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 Corresponding author: Corresponding author. Email: ambika_shah@rediffmail.com

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Abstract: A novel DOIND logic approach is proposed for domino logic, which reduces the leakage current with a minimum delay penalty. Simulation is performed at 70 nm technology node with supply voltage 1V for domino logic and DOIND logic based AND, OR, XOR and Half Adder circuits using the tanner EDA tool. Simulation results show that the proposed DOIND approach decreases the average leakage current by 68.83%, 66.6%, 77.86% and 74.34% for 2 input AND, OR, XOR and Half Adder respectively. The proposed approach also has 47.76% improvement in PDAP for the buffer circuit as compared to domino logic.

Key words: deep submicronDOIND logicdomino logicevaluationprechargesubthreshold leakage



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Fig. 1.  Standard domino logic circuit.

Fig. 2.  DOIND logic circuit.

Fig. 3.  Different pull down networks. (a) Buffer gate. (b) AND gate. (c) OR gate. (d) XOR gate.

Fig. 4.  (Color online) DC characteristics of domino logic and DOIND logic based buffer.

Fig. 5.  1-Bit Domino logic based half adder circuits.

Fig. 6.  1-Bit DOIND logic based half adder circuits.

Fig. 7.  (Color online) Leakage current of different logic circuits for all input combinations.

Fig. 8.  (Color online) Static power of different logic circuits for all input combinations.

Fig. 9.  (Color online) Static energy of different logic circuits for all input combinations.

Fig. 10.  Dynamic power of different logic circuits.

Fig. 11.  Dynamic EDP of different logic circuits.

Fig. 12.  (Color online) Layout of domino logic buffer.

Fig. 13.  (Color online) Layout of proposed DOIND logic buffer.

Table 1.   Operating status of the transistors in the DOIND logic buffer.

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Table 2.   Static parameters for different logic circuits.

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Table 3.   Average improvement of Static Parameters for different combinational logic circuits.

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Table 4.   Dynamic parameters for different logic circuits.

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Table 5.   Different performance metrics for buffer logic.

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2016

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      Ambika Prasad Shah, Vaibhav Neema, Shreeniwas Daulatabad. DOIND: a technique for leakage reduction in nanoscale domino logic circuits[J]. Journal of Semiconductors, 2016, 37(5): 055001. doi: 10.1088/1674-4926/37/5/055001 A P Shah, V Neema, S Daulatabad. DOIND: a technique for leakage reduction in nanoscale domino logic circuits[J]. J. Semicond., 2016, 37(5): 055001. doi: 10.1088/1674-4926/37/5/055001.Export: BibTex EndNote
      Citation:
      Ambika Prasad Shah, Vaibhav Neema, Shreeniwas Daulatabad. DOIND: a technique for leakage reduction in nanoscale domino logic circuits[J]. Journal of Semiconductors, 2016, 37(5): 055001. doi: 10.1088/1674-4926/37/5/055001

      A P Shah, V Neema, S Daulatabad. DOIND: a technique for leakage reduction in nanoscale domino logic circuits[J]. J. Semicond., 2016, 37(5): 055001. doi: 10.1088/1674-4926/37/5/055001.
      Export: BibTex EndNote

      DOIND: a technique for leakage reduction in nanoscale domino logic circuits

      doi: 10.1088/1674-4926/37/5/055001
      More Information
      • Corresponding author: Corresponding author. Email: ambika_shah@rediffmail.com
      • Received Date: 2015-08-19
      • Accepted Date: 2015-10-05
      • Published Date: 2016-01-25

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