SEMICONDUCTOR DEVICES

p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes

Wensheng Wei1, and Chunxi Zhang2

+ Author Affiliations

 Corresponding author: Wensheng Wei, Email: weiwensheng287@163.com

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Abstract: Using p+-type crystalline Si with n+-type nanocrystalline Si (nc-Si) and n+-type crystalline Si with p+-type nc-Si mosaic structures as electrodes, a type of power diode was prepared with epitaxial technique and plasma-enhanced chemical vapor deposition (PECVD) method. Firstly, the basic p+-n--n+-type Si diode was fabricated by epitaxially growing p+- and n+-type layers on two sides of a lightly doped n--type Si wafer respectively. Secondly, heavily phosphorus-doped Si film was deposited with PECVD on the lithography mask etched p+-type Si side of the basic device to form a component with mosaic anode. Thirdly, heavily boron-doped Si film was deposited on the etched n+-type Si side of the second device to form a diode with mosaic anode and mosaic cathode. The images of high resolution transmission electronic microscope and patterns of X-ray diffraction reveal nanocrystallization in the phosphorus- and boron-deposited films. Electrical measurements such as capacitance-voltage relation, current-voltage feature and reverse recovery waveform were carried out to clarify the performance of prepared devices. The important roles of (n-)Si/(p+)nc-Si and (n-)Si/(n+)nc-Si junctions in the static and dynamic conduction processes in operating diodes were investigated. The performance of mosaic devices was compared to that of a basic one.

Key words: Si power diodenanocrystalline Simosaic electrodereverse recovery



[1]
Amemiya Y, Suget T, Mizushima Y. Novel low loss and high speed diode utilizing an "ideal" ohmic contact. IEEE Trans Electron Devices, 1982, 29(2):236
[2]
Jayant B B. Analysis of a high voltage merged p-i-n/Schottky (MPS) rectifier. IEEE Electron Device Lett, 1987, EDL-8(9):407
[3]
Wang Ying, Yu Chenghao, Miao Zhikun, et al. Low leakage 4H-SiC junction barrier Schottky rectifier with sandwich p type well. IET Power Electron, 2015, 8(5):672
[4]
Ma Li, Gao Yong. A novel SiGe/Si heterojunction power diode utilizing an ideal ohmic contact. The Fourth International Workshop on Junction Technology (IWJT' 2004), 2004:263
[5]
Murray A F J, Kelleher A, Lane W A. On the use of a p+/n+ mosaic contact for fast switching diode applications. The Sixth International Conference on Power Electronics and Variable Speed Drives, Nottingham, UK, 1996:247
[6]
Aldrete V H E, Santana J, del Valle J L. Stored charge control of p-i-n diodes:a simulation approach. Fourth IEEE International Caracas Conference on Devices, Circuits and Systems, Oranjestad, Aruba, Dutch Caribbean, 2002:D021-1-8
[7]
Aldrete V H E, del Valle J L, Santana C J. A TCAD comparative study of power rectifiers-modified p-i-n vs. modified mosaic contact p-i-n diode. Microelectron Reliab, 2003, 43(1):181
[8]
Wu He, Wu Yu, Kang Baowei, et al. Simulation of power fast recovery diodes using local lifetime controlling technique. Chinese Journal of Semiconductors, 2003, 24(5):520
[9]
Humbel O, Galster N, Dalibor T, et al. Why is plasma engineering in fast recovery diodes by ion irradiation superior to emitter efficiency reduction. IEEE Trans Power Electron, 2003, 18(1):23
[10]
Wei Wensheng. Detection of carrier information in heterojunctions of nanocrystalline/crystalline Si. Solid State Sciences, 2010, 12(5):789
[11]
Chen X Y, Shen W Z. Observation of low-dimensional state tunneling in nanocrystalline silicon/crystalline silicon heterostructures. Appl Phys Lett, 2004, 85(5):287
[12]
Wei Wensheng, Zhao Ningning, Wang Tianmin. Conduction behavior of hydrogenated nanocrystalline silicon backward diode. Nanotechnology, 2006, 18(12):025203
[13]
Wei Wensheng, Wang Tianmin, Zhang Chunxi, et al. Variable capacitance diodes of (p)nc-Si:H/(n)c-Si heterojunction. Chinese Journal of Semiconductors, 2005, 26(4):745
[14]
Wei Wensheng, Yan Xunlei. Structural characterization of boron doped hydrogenated nanocrystalline silicon films. Vacuum, 2009, 83(5):787
[15]
Wei Wensheng, Luo Fei, Zhang Chunxi, et al. Detection of reverse recovery characteristics of power diodes. IET Power Electronics, 2016, 9(3):476
[16]
Arpatzanis N, Tassis D, Dimitriadis C A, et al. Experimental investigation of noise in 4H-SiC p+-n-n+ junctions. Semicond Sci Technol, 2006, 21(3):591
[17]
Domeij M, Lutz J, Silber D. On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche. IEEE Trans Electron Devices, 2003, 50(2):486
[18]
Pendharkar S P, Trivedi M, Shenai K. Dynamics of reverse recovery of high power p-i-n diodes. IEEE Trans Electron Devices, 1996, 43(1):142
Fig. 1.  Schematics of the prepared diodes. (a) Without mosaic electrode. (b) With mosaic anode only. (c) With mosaic anode and cathode. EBI1, EBI2, EBI1′ and EBI2′ are the built-in electrical field in (n-)Si/(p+)/Si, (n-)Si/(n+)Si, (n-)Si/(n+)nc-Si and (n-)Si/(p+)nc-Si junctions, respectively.

Fig. 2.  Structural characterization for the fabricated films. (a) High resolution transmission electron microscopy (HRTEM) photo of the boron-doped specimen. (b) HRTEM image of the phosphorus-doped film. (c) X-ray diffraction patterns of the two types of samples.

Fig. 3.  Relationship between capacitance C and applied voltage V of (n-)Si/(p+)nc-Si and (n-)Si/(n+)nc-Si junctions. The dots are experimental data while the lines are the fitting ones according to the data.

Fig. 4.  Relationship between capacitance C and applied voltage V of (n-)Si/(p+)nc-Si and (n-)Si/(n+)nc-Si junctions. The dots are experimental data while the lines are the fitting ones according to the data.

Fig. 5.  Waveforms of reverse recovery current Irr and voltage Vrr. (a) For the operating component without mosaic structure. (b) For the performing device with mosaic anode only. (c) For the running diode with mosaic anode and cathode.

Table 1.   Hall effect experimental results for the van der Pauw-type doped nanocrystalline Si films.

Dopant in SiH4Doping ratio(vol%)Film thickness(cm)Hall coefficientConductivity(Ω-1cm-1)Hall mobility(cm2/(V⋅s))Carrier concentration(cm-3)
B2H632.0×10-44.80172.4991121.3×1018
PH332.0×10-40.567568.7258391.1×1019
DownLoad: CSV
[1]
Amemiya Y, Suget T, Mizushima Y. Novel low loss and high speed diode utilizing an "ideal" ohmic contact. IEEE Trans Electron Devices, 1982, 29(2):236
[2]
Jayant B B. Analysis of a high voltage merged p-i-n/Schottky (MPS) rectifier. IEEE Electron Device Lett, 1987, EDL-8(9):407
[3]
Wang Ying, Yu Chenghao, Miao Zhikun, et al. Low leakage 4H-SiC junction barrier Schottky rectifier with sandwich p type well. IET Power Electron, 2015, 8(5):672
[4]
Ma Li, Gao Yong. A novel SiGe/Si heterojunction power diode utilizing an ideal ohmic contact. The Fourth International Workshop on Junction Technology (IWJT' 2004), 2004:263
[5]
Murray A F J, Kelleher A, Lane W A. On the use of a p+/n+ mosaic contact for fast switching diode applications. The Sixth International Conference on Power Electronics and Variable Speed Drives, Nottingham, UK, 1996:247
[6]
Aldrete V H E, Santana J, del Valle J L. Stored charge control of p-i-n diodes:a simulation approach. Fourth IEEE International Caracas Conference on Devices, Circuits and Systems, Oranjestad, Aruba, Dutch Caribbean, 2002:D021-1-8
[7]
Aldrete V H E, del Valle J L, Santana C J. A TCAD comparative study of power rectifiers-modified p-i-n vs. modified mosaic contact p-i-n diode. Microelectron Reliab, 2003, 43(1):181
[8]
Wu He, Wu Yu, Kang Baowei, et al. Simulation of power fast recovery diodes using local lifetime controlling technique. Chinese Journal of Semiconductors, 2003, 24(5):520
[9]
Humbel O, Galster N, Dalibor T, et al. Why is plasma engineering in fast recovery diodes by ion irradiation superior to emitter efficiency reduction. IEEE Trans Power Electron, 2003, 18(1):23
[10]
Wei Wensheng. Detection of carrier information in heterojunctions of nanocrystalline/crystalline Si. Solid State Sciences, 2010, 12(5):789
[11]
Chen X Y, Shen W Z. Observation of low-dimensional state tunneling in nanocrystalline silicon/crystalline silicon heterostructures. Appl Phys Lett, 2004, 85(5):287
[12]
Wei Wensheng, Zhao Ningning, Wang Tianmin. Conduction behavior of hydrogenated nanocrystalline silicon backward diode. Nanotechnology, 2006, 18(12):025203
[13]
Wei Wensheng, Wang Tianmin, Zhang Chunxi, et al. Variable capacitance diodes of (p)nc-Si:H/(n)c-Si heterojunction. Chinese Journal of Semiconductors, 2005, 26(4):745
[14]
Wei Wensheng, Yan Xunlei. Structural characterization of boron doped hydrogenated nanocrystalline silicon films. Vacuum, 2009, 83(5):787
[15]
Wei Wensheng, Luo Fei, Zhang Chunxi, et al. Detection of reverse recovery characteristics of power diodes. IET Power Electronics, 2016, 9(3):476
[16]
Arpatzanis N, Tassis D, Dimitriadis C A, et al. Experimental investigation of noise in 4H-SiC p+-n-n+ junctions. Semicond Sci Technol, 2006, 21(3):591
[17]
Domeij M, Lutz J, Silber D. On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche. IEEE Trans Electron Devices, 2003, 50(2):486
[18]
Pendharkar S P, Trivedi M, Shenai K. Dynamics of reverse recovery of high power p-i-n diodes. IEEE Trans Electron Devices, 1996, 43(1):142
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    Received: 09 October 2015 Revised: 23 November 2015 Online: Published: 01 June 2016

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      Wensheng Wei, Chunxi Zhang. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes[J]. Journal of Semiconductors, 2016, 37(6): 064007. doi: 10.1088/1674-4926/37/6/064007 W S Wei, C X Zhang. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes[J]. J. Semicond., 2016, 37(6): 064007. doi: 10.1088/1674-4926/37/6/064007.Export: BibTex EndNote
      Citation:
      Wensheng Wei, Chunxi Zhang. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes[J]. Journal of Semiconductors, 2016, 37(6): 064007. doi: 10.1088/1674-4926/37/6/064007

      W S Wei, C X Zhang. p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes[J]. J. Semicond., 2016, 37(6): 064007. doi: 10.1088/1674-4926/37/6/064007.
      Export: BibTex EndNote

      p+-n--n+-type power diode with crystalline/nanocrystalline Si mosaic electrodes

      doi: 10.1088/1674-4926/37/6/064007
      Funds:

      the National Natural Science Foundation of China (No. 61274006)

      the National Natural Science Foundation of China No. 61274006

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      • Corresponding author: Email: weiwensheng287@163.com
      • Received Date: 2015-10-09
      • Revised Date: 2015-11-23
      • Published Date: 2016-06-01

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