Fig. 1.
(Color online) Schematic views of (a) fluorinated-gate dielectrics MOS-HEMT and (b) conventional dielectric-last MOS-HEMT.
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Tao Gao, Ruimin Xu, Kai Zhang, Yuechan Kong, Jianjun Zhou, Cen Kong, Xinxin Yu, Xun Dong, Tangsheng Chen. High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer[J]. Journal of Semiconductors, 2016, 37(6): 064013. doi: 10.1088/1674-4926/37/6/064013
T Gao, R M Xu, K Zhang, Y C Kong, J J Zhou, C Kong, X X Yu, X Dong, T S Chen. High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer[J]. J. Semicond., 2016, 37(6): 064013. doi: 10.1088/1674-4926/37/6/064013.
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High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer
doi: 10.1088/1674-4926/37/6/064013
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Abstract
We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) by a fluorinated gate dielectric technique. A nanolaminate of an Al2O3/LaxAl1-xO3/Al2O3 stack (x≈0.33) grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer. Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique, delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm. The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications. -
References
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