SEMICONDUCTOR DEVICES

Development of 17 kV 4H-SiC PiN diode

Runhua Huang, Yonghong Tao, Ling Wang, Gang Chen, Song Bai, Rui Li and Zhifei Zhao

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 Corresponding author: Huang Runhua, Email: 18626422152@163.com

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Abstract: The design, fabrication, and electrical characteristics of a 4H-SiC PiN diode with breakdown voltage higher than 17 kV are presented. The three-zone JTE has been used in the fabrication. Numerical simulations have been performed to optimize the parameters of the edge termination technique. The epilayer properties of the N-type are 175μm with a doping of 2×1014cm-3. With the three-zone JTE, a typical breakdown voltage of 17 kV has been achieved.

Key words: 4H-SiCpower deviceterminationJTE



[1]
Huang Runhua, Tao Yonghong, Cao Pengfei. Development of 10 kV 4H-SiC JBS diode with FGR termination. Journal of Semiconductors, 2014, 35(7): 074005 doi: 10.1088/1674-4926/35/7/074005
[2]
Huang Runhua, Chen Gang, Bai Song. Fabrication and characterization of 4500 V 4H-SiC JBS diode. Materials Science Forum, 2014, 778-780: 800 doi: 10.4028/www.scientific.net/MSF.778-780
[3]
Huang Runhua, Tao Yonghong, Chen Gang. Fabrication and characterization of 6500 V 4H-SiC JBS diode. Advanced Materials Research, 2014, 846/847: 737
[4]
Salemi A, Elahipanah H, Buono B. Area-optimized JTE simulations for 4.5 kV non ion-implanted SiC BJT. Materials Science Forum, 2013, 740-742: 974 doi: 10.4028/www.scientific.net/MSF.740-742
[5]
Raynaud C, Lazar M, Planson D. Design, fabrication and characterization of 5 kV 4H-SiC p+n planar bipolar diodes protected by junction termination extension. Materials Science Forum, 2004, 457-460: 1033 doi: 10.4028/www.scientific.net/MSF.457-460
[6]
Mihaila A P, Udrea F, Rashid S J. Evaluation of termination techniques for 4H-SiC PiN diodes and trench JFETs. Materials Science Forum, 2007, 556/557: 925 doi: 10.4028/www.scientific.net/MSF.556-557
[7]
Vassilevski K, Nikitina I, Horsfal A. High voltage silicon carbide Schottky diodes with single zone junction termination extension. Materials Science Forum, 2007, 556/557: 873 doi: 10.4028/www.scientific.net/MSF.556-557
[8]
Wang X, Cooper J A. Optimization of JTE edge terminations for 10 kV power devices in 4H-SiC. Materials Science Forum, 2004, 457-460: 1257 doi: 10.4028/www.scientific.net/MSF.457-460
[9]
Kaji N, Niwa H, Suda J. Ultrahigh-voltage (20 kV) SiC PiN diodes with a space-modulated JTE and lifetime enhancement process via thermal oxidation. Materials Science Forum, 2014, 778-780: 832 doi: 10.4028/www.scientific.net/MSF.778-780
[10]
Bartolf H, Sundaramoorthy V, Mihaila A. Study of 4H-SiC Schottky diode designs for 3.3 kV applications. Materials Science Forum, 2014, 778-780: 795 doi: 10.4028/www.scientific.net/MSF.778-780
[11]
ATLAS User's Manual, www.silvaco.com
[12]
Wang Yiyu, Peng Zhaoyan, Shen Huajun. Characterization of the effects of nitrogen and hydrogen passivation on SiO2/4H-SiC interface by low temperature conductance measurements. Journal of Semiconductors, 2016, 37(2): 026001 doi: 10.1088/1674-4926/37/2/026001
Fig. 1.  Schematic device cross-sectional view of a 4H-SiC PiN diode.

Fig. 2.  Breakdown voltage as a function of dose of JTE2.

Fig. 3.  Color online) Distribution of electric field for reverse bias 17 kV for different JTE2 dose.

Fig. 4.  (Color online) Distribution of electric field for reverse bias 17 kV for different interface charge densities.

Fig. 5.  (Color online) Distribution of electric field for reverse bias 17 kV without channel stop.

Fig. 6.  Measured reverse I-V characteristic for 17 kV 4H-SiC PiN diode.

Fig. 7.  Measured forward I-V characteristic for 17 kV 4H-SiC PiN diode for different temperature.

[1]
Huang Runhua, Tao Yonghong, Cao Pengfei. Development of 10 kV 4H-SiC JBS diode with FGR termination. Journal of Semiconductors, 2014, 35(7): 074005 doi: 10.1088/1674-4926/35/7/074005
[2]
Huang Runhua, Chen Gang, Bai Song. Fabrication and characterization of 4500 V 4H-SiC JBS diode. Materials Science Forum, 2014, 778-780: 800 doi: 10.4028/www.scientific.net/MSF.778-780
[3]
Huang Runhua, Tao Yonghong, Chen Gang. Fabrication and characterization of 6500 V 4H-SiC JBS diode. Advanced Materials Research, 2014, 846/847: 737
[4]
Salemi A, Elahipanah H, Buono B. Area-optimized JTE simulations for 4.5 kV non ion-implanted SiC BJT. Materials Science Forum, 2013, 740-742: 974 doi: 10.4028/www.scientific.net/MSF.740-742
[5]
Raynaud C, Lazar M, Planson D. Design, fabrication and characterization of 5 kV 4H-SiC p+n planar bipolar diodes protected by junction termination extension. Materials Science Forum, 2004, 457-460: 1033 doi: 10.4028/www.scientific.net/MSF.457-460
[6]
Mihaila A P, Udrea F, Rashid S J. Evaluation of termination techniques for 4H-SiC PiN diodes and trench JFETs. Materials Science Forum, 2007, 556/557: 925 doi: 10.4028/www.scientific.net/MSF.556-557
[7]
Vassilevski K, Nikitina I, Horsfal A. High voltage silicon carbide Schottky diodes with single zone junction termination extension. Materials Science Forum, 2007, 556/557: 873 doi: 10.4028/www.scientific.net/MSF.556-557
[8]
Wang X, Cooper J A. Optimization of JTE edge terminations for 10 kV power devices in 4H-SiC. Materials Science Forum, 2004, 457-460: 1257 doi: 10.4028/www.scientific.net/MSF.457-460
[9]
Kaji N, Niwa H, Suda J. Ultrahigh-voltage (20 kV) SiC PiN diodes with a space-modulated JTE and lifetime enhancement process via thermal oxidation. Materials Science Forum, 2014, 778-780: 832 doi: 10.4028/www.scientific.net/MSF.778-780
[10]
Bartolf H, Sundaramoorthy V, Mihaila A. Study of 4H-SiC Schottky diode designs for 3.3 kV applications. Materials Science Forum, 2014, 778-780: 795 doi: 10.4028/www.scientific.net/MSF.778-780
[11]
ATLAS User's Manual, www.silvaco.com
[12]
Wang Yiyu, Peng Zhaoyan, Shen Huajun. Characterization of the effects of nitrogen and hydrogen passivation on SiO2/4H-SiC interface by low temperature conductance measurements. Journal of Semiconductors, 2016, 37(2): 026001 doi: 10.1088/1674-4926/37/2/026001
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    Received: 06 December 2015 Revised: 16 March 2016 Online: Published: 01 August 2016

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      Runhua Huang, Yonghong Tao, Ling Wang, Gang Chen, Song Bai, Rui Li, Zhifei Zhao. Development of 17 kV 4H-SiC PiN diode[J]. Journal of Semiconductors, 2016, 37(8): 084001. doi: 10.1088/1674-4926/37/8/084001 R H Huang, Y H Tao, L Wang, G Chen, S Bai, R Li, Z F Zhao. Development of 17 kV 4H-SiC PiN diode[J]. J. Semicond., 2016, 37(8): 084001. doi: 10.1088/1674-4926/37/8/084001.Export: BibTex EndNote
      Citation:
      Runhua Huang, Yonghong Tao, Ling Wang, Gang Chen, Song Bai, Rui Li, Zhifei Zhao. Development of 17 kV 4H-SiC PiN diode[J]. Journal of Semiconductors, 2016, 37(8): 084001. doi: 10.1088/1674-4926/37/8/084001

      R H Huang, Y H Tao, L Wang, G Chen, S Bai, R Li, Z F Zhao. Development of 17 kV 4H-SiC PiN diode[J]. J. Semicond., 2016, 37(8): 084001. doi: 10.1088/1674-4926/37/8/084001.
      Export: BibTex EndNote

      Development of 17 kV 4H-SiC PiN diode

      doi: 10.1088/1674-4926/37/8/084001
      Funds:

      the National High Technology Research and Development Program of China 2014AA041401

      Project supported by the National High Technology Research and Development Program of China (No. 2014AA041401)

      More Information
      • Corresponding author: Huang Runhua, Email: 18626422152@163.com
      • Received Date: 2015-12-06
      • Revised Date: 2016-03-16
      • Published Date: 2016-08-01

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