Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films

H. H. Güllü; M. Parlak

doi:10.1088/1674-4926/38/12/123001

J. Semicond. > 2017, Volume 38 > Issue 12 > 123001, doi: 10.1088/1674-4926/38/12/123001

SEMICONDUCTOR MATERIALS

Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films

H. H. Güllü^{1, 3,} and M. Parlak^{2, 3}

+ Author Affiliations

Corresponding author: H. H. Güllü, Email: hgullu@metu.edu.tr

Abstract: The Cu–In–Zn–Se thin film was synthesized by changing the contribution of In in chalcopyrite CuInSe₂ with Zn. The XRD spectra of the films showed the characteristic diffraction peaks in a good agreement with the quaternary Cu–In–Zn–Se compound. They were in the polycrystalline nature without any post-thermal process, and the main orientation was found to be in the (112) direction with tetragonal crystalline structure. With increasing annealing temperature, the peak intensities in preferred orientation became more pronounced and grain sizes were in increasing behavior from 6.0 to 25.0 nm. The samples had almost the same atomic composition of Cu_0.5In_0.5ZnSe₂. However, EDS results of the deposited films indicated that there was Se re-evaporation and/or segregation with the annealing in the structure of the film. According to the optical analysis, the transmittance values of the films increased with the annealing temperature. The absorption coefficient of the films was calculated as around 10⁵ cm⁻¹ in the visible region. Moreover, optical band gap values were found to be changing in between 2.12 and 2.28 eV depending on annealing temperature. The temperature-dependent dark- and photo-conductivity measurements were carried out to investigate the electrical characteristics of the films.

Key words: annealing, Cu–In–Zn–Se, thin film

References

[1]	Shay J L, Wernick J H. Ternary chalcopyrite semiconductors: growth, electronic properties and applications. Oxford: Pergamon Press, 1975
[2]	Liu C Y, Li Z M, Gu H Y, et al. Sodium passivation of the grain boundaries in CuInSe₂ and Cu₂ZnSnS₄ for high-efficiency solar cells. Adv Energy Mater, 2017, 7: 1601457 doi: 10.1002/aenm.201601457
[3]	Kushiya K. CuInSe₂-based thin-film photovoltaic technology in the gigawatt production era. Jpn J Appl Phys, 2012, 51: 10NC01
[4]	Nanayakkara S U, Horowitz K, Kanevce A, et al. Evaluating the economic viability of CdTe/CIS and CIGS/CIS tandem photovoltaic modules. Prog Photovolt Res Appl, 2017, 25: 271 doi: 10.1002/pip.v25.4
[5]	Green M A, Emery K, Hihikawa Y, et al. Solar cell efficieny tables (version 48). Prog Photovolt Res Appl, 2016, 24: 905 doi: 10.1002/pip.v24.7
[6]	Gremenok V F, Zaretskaya E P, Siarheyeva V M, et al. Investigation of CuInZnSe₂ thin films for solar cell applications. Thin Solid Films, 2005, 487(1/2): 193
[7]	Wagner G, Lehmann S, Schorr S, et al. The two-phase region in 2(ZnSe)_x(CuInSe₂)_1−x alloys and structural relation between the tetragonal and cubic phases. J Solid Stat Chem, 2005, 178: 3631 doi: 10.1016/j.jssc.2005.09.009
[8]	Bodnar I V, Gremenok V F. Crystal growth and properties of (CuInSe₂)_1−x(2ZnSe)_x Solid solutions. Inorg Mater, 2003, 39(11): 1122 doi: 10.1023/A:1027333105634
[9]	Gan J N, Tauc J. Optical properties of the (CuInSe₂)_1–x(2ZnSe)_x system. Phys Rev B, 1975, 12(12): 5797 doi: 10.1103/PhysRevB.12.5797
[10]	Takei K, Maeda T, Gao F, et al. Crystallographic and optical properties of CuInSe₂–ZnSe system. Jpn J Appl Phys, 2014, 53: 05FW07
[11]	Schorr S, Tovar M, Sheptyakov D, et al. Crystal structure and cation distribution in the solid solution series 2(ZnX)–CuInX₂ (X=S, Se, Te). J Phys Chem Solids, 2005, 66: 1961 doi: 10.1016/j.jpcs.2005.09.035
[12]	Wibowo R A, Kim K H. Band gap engineering of RF-sputtered CuInZnSe₂ thin films for indium-reduced thin-film solar cell application. Sol Energy Mater Sol Cells, 2009, 93: 941 doi: 10.1016/j.solmat.2008.11.020
[13]	Tseng Y H, Yang C S, Wu C H, et al. Growth mechanism of CuZnInSe₂ thin films grown by molecular beam epitaxy. J Cryst Growth, 2013, 378: 158 doi: 10.1016/j.jcrysgro.2012.12.045
[14]	Guillen C, Herrero J. Zn incorporation and (CuIn)_1−xZn_2xSe₂ thin film formation during the selenization of evaporated Cu and In precursors on Al:ZnO coated glass substrates. J Phys Chem Solids, 2011, 72: 1362 doi: 10.1016/j.jpcs.2011.08.016
[15]	Müller J, Nowoczin J, Schmitt H. Composition, structure and optical properties of sputtered thin films of CuInSe₂. Thin Solid Films, 2006, 496(2): 364 doi: 10.1016/j.tsf.2005.09.077
[16]	Adachi S. Properties of group-IV, III–V and II–VI semiconductors. England: John Wiley & Sons Ltd, 2005
[17]	Kaleli M, Parlak M, Ercelebi C. Studies on device properties of an n-AgIn₅Se₈/p-Si heterojunction diode. Semicond Sci Technol, 2011, 26(10): 105013 doi: 10.1088/0268-1242/26/10/105013
[18]	Colakoglu T, Parlak M. Electrical and photoelectrical properties of Ag–In–Se thin films evaporated by e-beam technique. J Phys D, 2009, 42(3): 035416 doi: 10.1088/0022-3727/42/3/035416
[19]	Roth A. Vacuum Technology. Amsterdam: North Holland, 1980
[20]	Wibowo R A, Kim W S, Lee E S, et al. Single step preparation of quaternary Cu₂ZnSnSe₄ thin films by RF magnetron sputtering from binary chalcogenide targets. J Phys Chem Solids, 2007, 68(10): 1908 doi: 10.1016/j.jpcs.2007.05.022
[21]	Tanino H, Maeda T, Fujikake H, et al. Raman spectra of CuInSe₂. Phys Rev B, 1992, 23: 1323
[22]	Langford J I, Willson a J C. Scherrer after sixty years: A survey and some new results in the determination of crystallite size. J Appl Cryst, 1978, 11: 102 doi: 10.1107/S0021889878012844
[23]	Cullity B D. Elements of X-ray diffraction. USA: Addision-Wesley Publishing, 1967
[24]	Güllü H H, Coskun E, Parlak M. Characterization of co-evaporated Cu–Ag–In–Se thin films. Braz J Phys, 2014, 44(6): 719 doi: 10.1007/s13538-014-0270-2
[25]	Parlak M, Ercelebi C. The effect of substrate and post-annealing temperature on the structural and optical properties of polycrystalline InSe thin films. Thin Solid Films, 1998, 322(1/2): 334
[26]	Lopez-Garcia J, Guillen C. CuIn_1−xAl_xSe₂ thin films obtained by selenization of evaporated metallic precursor layers. Thin Solid Films, 2009, 517(7): 2240 doi: 10.1016/j.tsf.2008.10.095
[27]	Jaffe J E, Zunger A. Theory of the band-gap anomaly in ABC₂ chalcopyrite semiconductors. Phys Rev B, 1984, 29: 1882 doi: 10.1103/PhysRevB.29.1882
[28]	Revathi N, Prathap P, Ramakrishna Reddy K T. Thickness dependent physical properties of close space evaporated In₂S₃ films. Solid State Sci, 2009, 11(7): 1288 doi: 10.1016/j.solidstatesciences.2009.04.019
[29]	Karaagac H, Parlak M. Deposition of AgGaS₂ thin films by double source thermal evaporation technique. J Mater Sci: Mater Electron, 2011, 22: 1426 doi: 10.1007/s10854-011-0325-x
[30]	Bube R H. Photoelectronic properties of semiconductors. Cambridge: Cambridge University Press, 1992
[31]	Bube R H. Photoconductivity of solids. New York: Interscience, 1960

Fig. 1. (Color online) XRD patterns for CIZS thin films at different annealing temperatures.

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Fig. 2. (Color online) The Raman spectra for CIZS thin films.

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Fig. 3. The SEM images for CIZS thin films in (a) as-grown form, (b) annealed at 300 °C, (c) and 400 °C.

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Fig. 4. (Color online) The transmittance spectra for CIZS thin films.

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Fig. 5. (Color online) The variation of (αhν)² as a function of hν for CIZS films.

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Fig. 6. (Color online) Temperature dependent dark electrical conductivity of CIZS thin films in as-grown and annealed at 300 and 400 °C forms.

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Fig. 7. (Color online) The variation of the photoconductivity with temperature and illumination intensity for as-grown CIZS thin film.

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Fig. 8. (Color online) The variation of the photocurrent as a function of illumination intensity at temperatures of 100, 200, 300, and 400 K for as-grown CIZS thin film.

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Table 1. EDS results of as-grown and annealed CIZS thin films.

Sample	Cu (at %)	In (at %)	Zn (at %)	Se (at %)
As-grown	13.8	14.5	24.5	47.2
300 °C annealing	15.6	16.8	25.8	41.8
400 °C annealing	17.4	17.9	28.9	35.8

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[1]	Shay J L, Wernick J H. Ternary chalcopyrite semiconductors: growth, electronic properties and applications. Oxford: Pergamon Press, 1975
[2]	Liu C Y, Li Z M, Gu H Y, et al. Sodium passivation of the grain boundaries in CuInSe₂ and Cu₂ZnSnS₄ for high-efficiency solar cells. Adv Energy Mater, 2017, 7: 1601457 doi: 10.1002/aenm.201601457
[3]	Kushiya K. CuInSe₂-based thin-film photovoltaic technology in the gigawatt production era. Jpn J Appl Phys, 2012, 51: 10NC01
[4]	Nanayakkara S U, Horowitz K, Kanevce A, et al. Evaluating the economic viability of CdTe/CIS and CIGS/CIS tandem photovoltaic modules. Prog Photovolt Res Appl, 2017, 25: 271 doi: 10.1002/pip.v25.4
[5]	Green M A, Emery K, Hihikawa Y, et al. Solar cell efficieny tables (version 48). Prog Photovolt Res Appl, 2016, 24: 905 doi: 10.1002/pip.v24.7
[6]	Gremenok V F, Zaretskaya E P, Siarheyeva V M, et al. Investigation of CuInZnSe₂ thin films for solar cell applications. Thin Solid Films, 2005, 487(1/2): 193
[7]	Wagner G, Lehmann S, Schorr S, et al. The two-phase region in 2(ZnSe)_x(CuInSe₂)_1−x alloys and structural relation between the tetragonal and cubic phases. J Solid Stat Chem, 2005, 178: 3631 doi: 10.1016/j.jssc.2005.09.009
[8]	Bodnar I V, Gremenok V F. Crystal growth and properties of (CuInSe₂)_1−x(2ZnSe)_x Solid solutions. Inorg Mater, 2003, 39(11): 1122 doi: 10.1023/A:1027333105634
[9]	Gan J N, Tauc J. Optical properties of the (CuInSe₂)_1–x(2ZnSe)_x system. Phys Rev B, 1975, 12(12): 5797 doi: 10.1103/PhysRevB.12.5797
[10]	Takei K, Maeda T, Gao F, et al. Crystallographic and optical properties of CuInSe₂–ZnSe system. Jpn J Appl Phys, 2014, 53: 05FW07
[11]	Schorr S, Tovar M, Sheptyakov D, et al. Crystal structure and cation distribution in the solid solution series 2(ZnX)–CuInX₂ (X=S, Se, Te). J Phys Chem Solids, 2005, 66: 1961 doi: 10.1016/j.jpcs.2005.09.035
[12]	Wibowo R A, Kim K H. Band gap engineering of RF-sputtered CuInZnSe₂ thin films for indium-reduced thin-film solar cell application. Sol Energy Mater Sol Cells, 2009, 93: 941 doi: 10.1016/j.solmat.2008.11.020
[13]	Tseng Y H, Yang C S, Wu C H, et al. Growth mechanism of CuZnInSe₂ thin films grown by molecular beam epitaxy. J Cryst Growth, 2013, 378: 158 doi: 10.1016/j.jcrysgro.2012.12.045
[14]	Guillen C, Herrero J. Zn incorporation and (CuIn)_1−xZn_2xSe₂ thin film formation during the selenization of evaporated Cu and In precursors on Al:ZnO coated glass substrates. J Phys Chem Solids, 2011, 72: 1362 doi: 10.1016/j.jpcs.2011.08.016
[15]	Müller J, Nowoczin J, Schmitt H. Composition, structure and optical properties of sputtered thin films of CuInSe₂. Thin Solid Films, 2006, 496(2): 364 doi: 10.1016/j.tsf.2005.09.077
[16]	Adachi S. Properties of group-IV, III–V and II–VI semiconductors. England: John Wiley & Sons Ltd, 2005
[17]	Kaleli M, Parlak M, Ercelebi C. Studies on device properties of an n-AgIn₅Se₈/p-Si heterojunction diode. Semicond Sci Technol, 2011, 26(10): 105013 doi: 10.1088/0268-1242/26/10/105013
[18]	Colakoglu T, Parlak M. Electrical and photoelectrical properties of Ag–In–Se thin films evaporated by e-beam technique. J Phys D, 2009, 42(3): 035416 doi: 10.1088/0022-3727/42/3/035416
[19]	Roth A. Vacuum Technology. Amsterdam: North Holland, 1980
[20]	Wibowo R A, Kim W S, Lee E S, et al. Single step preparation of quaternary Cu₂ZnSnSe₄ thin films by RF magnetron sputtering from binary chalcogenide targets. J Phys Chem Solids, 2007, 68(10): 1908 doi: 10.1016/j.jpcs.2007.05.022
[21]	Tanino H, Maeda T, Fujikake H, et al. Raman spectra of CuInSe₂. Phys Rev B, 1992, 23: 1323
[22]	Langford J I, Willson a J C. Scherrer after sixty years: A survey and some new results in the determination of crystallite size. J Appl Cryst, 1978, 11: 102 doi: 10.1107/S0021889878012844
[23]	Cullity B D. Elements of X-ray diffraction. USA: Addision-Wesley Publishing, 1967
[24]	Güllü H H, Coskun E, Parlak M. Characterization of co-evaporated Cu–Ag–In–Se thin films. Braz J Phys, 2014, 44(6): 719 doi: 10.1007/s13538-014-0270-2
[25]	Parlak M, Ercelebi C. The effect of substrate and post-annealing temperature on the structural and optical properties of polycrystalline InSe thin films. Thin Solid Films, 1998, 322(1/2): 334
[26]	Lopez-Garcia J, Guillen C. CuIn_1−xAl_xSe₂ thin films obtained by selenization of evaporated metallic precursor layers. Thin Solid Films, 2009, 517(7): 2240 doi: 10.1016/j.tsf.2008.10.095
[27]	Jaffe J E, Zunger A. Theory of the band-gap anomaly in ABC₂ chalcopyrite semiconductors. Phys Rev B, 1984, 29: 1882 doi: 10.1103/PhysRevB.29.1882
[28]	Revathi N, Prathap P, Ramakrishna Reddy K T. Thickness dependent physical properties of close space evaporated In₂S₃ films. Solid State Sci, 2009, 11(7): 1288 doi: 10.1016/j.solidstatesciences.2009.04.019
[29]	Karaagac H, Parlak M. Deposition of AgGaS₂ thin films by double source thermal evaporation technique. J Mater Sci: Mater Electron, 2011, 22: 1426 doi: 10.1007/s10854-011-0325-x
[30]	Bube R H. Photoelectronic properties of semiconductors. Cambridge: Cambridge University Press, 1992
[31]	Bube R H. Photoconductivity of solids. New York: Interscience, 1960

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Received: 02 February 2017 Revised: 25 May 2017 Online: Uncorrected proof: 11 November 2017Corrected proof: 15 November 2017Published: 01 December 2017

Article Navigation > Journal of Semiconductors > 2017 > 38(12): 123001

H. H. Güllü, M. Parlak. Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films[J]. Journal of Semiconductors, 2017, 38(12): 123001. doi: 10.1088/1674-4926/38/12/123001 H. H. Güllü, M. Parlak. Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films[J]. J. Semicond., 2017, 38(12): 123001. doi: 10.1088/1674-4926/38/12/123001.Export: BibTex EndNote

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H. H. Güllü, M. Parlak. Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films[J]. Journal of Semiconductors, 2017, 38(12): 123001. doi: 10.1088/1674-4926/38/12/123001

H. H. Güllü, M. Parlak. Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films[J]. J. Semicond., 2017, 38(12): 123001. doi: 10.1088/1674-4926/38/12/123001.

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H. H. Güllü, M. Parlak. Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films[J]. J. Semicond., 2017, 38(12): 123001. doi: 10.1088/1674-4926/38/12/123001.

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Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films

doi: 10.1088/1674-4926/38/12/123001

H. H. Güllü^1,3,,
M. Parlak^2,3

1.
Central Laboratory, Middle East Technical University (METU), Ankara 06800, Turkey
2.
Department of Physics, Middle East Technical University (METU), Ankara 06800, Turkey
3.
Center for Solar Energy Research and Applications (GÜNAM), METU, Ankara 06800, Turkey

More Information

Corresponding author: Email: hgullu@metu.edu.tr
Received Date: 2017-02-02
Revised Date: 2017-05-25
Published Date: 2017-12-01

Abstract

Abstract

The Cu–In–Zn–Se thin film was synthesized by changing the contribution of In in chalcopyrite CuInSe₂ with Zn. The XRD spectra of the films showed the characteristic diffraction peaks in a good agreement with the quaternary Cu–In–Zn–Se compound. They were in the polycrystalline nature without any post-thermal process, and the main orientation was found to be in the (112) direction with tetragonal crystalline structure. With increasing annealing temperature, the peak intensities in preferred orientation became more pronounced and grain sizes were in increasing behavior from 6.0 to 25.0 nm. The samples had almost the same atomic composition of Cu_0.5In_0.5ZnSe₂. However, EDS results of the deposited films indicated that there was Se re-evaporation and/or segregation with the annealing in the structure of the film. According to the optical analysis, the transmittance values of the films increased with the annealing temperature. The absorption coefficient of the films was calculated as around 10⁵ cm⁻¹ in the visible region. Moreover, optical band gap values were found to be changing in between 2.12 and 2.28 eV depending on annealing temperature. The temperature-dependent dark- and photo-conductivity measurements were carried out to investigate the electrical characteristics of the films.
- annealing,
- Cu–In–Zn–Se,
- thin film

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References(31)

References

[1]	Shay J L, Wernick J H. Ternary chalcopyrite semiconductors: growth, electronic properties and applications. Oxford: Pergamon Press, 1975
[2]	Liu C Y, Li Z M, Gu H Y, et al. Sodium passivation of the grain boundaries in CuInSe₂ and Cu₂ZnSnS₄ for high-efficiency solar cells. Adv Energy Mater, 2017, 7: 1601457 doi: 10.1002/aenm.201601457
[3]	Kushiya K. CuInSe₂-based thin-film photovoltaic technology in the gigawatt production era. Jpn J Appl Phys, 2012, 51: 10NC01
[4]	Nanayakkara S U, Horowitz K, Kanevce A, et al. Evaluating the economic viability of CdTe/CIS and CIGS/CIS tandem photovoltaic modules. Prog Photovolt Res Appl, 2017, 25: 271 doi: 10.1002/pip.v25.4
[5]	Green M A, Emery K, Hihikawa Y, et al. Solar cell efficieny tables (version 48). Prog Photovolt Res Appl, 2016, 24: 905 doi: 10.1002/pip.v24.7
[6]	Gremenok V F, Zaretskaya E P, Siarheyeva V M, et al. Investigation of CuInZnSe₂ thin films for solar cell applications. Thin Solid Films, 2005, 487(1/2): 193
[7]	Wagner G, Lehmann S, Schorr S, et al. The two-phase region in 2(ZnSe)_x(CuInSe₂)_1−x alloys and structural relation between the tetragonal and cubic phases. J Solid Stat Chem, 2005, 178: 3631 doi: 10.1016/j.jssc.2005.09.009
[8]	Bodnar I V, Gremenok V F. Crystal growth and properties of (CuInSe₂)_1−x(2ZnSe)_x Solid solutions. Inorg Mater, 2003, 39(11): 1122 doi: 10.1023/A:1027333105634
[9]	Gan J N, Tauc J. Optical properties of the (CuInSe₂)_1–x(2ZnSe)_x system. Phys Rev B, 1975, 12(12): 5797 doi: 10.1103/PhysRevB.12.5797
[10]	Takei K, Maeda T, Gao F, et al. Crystallographic and optical properties of CuInSe₂–ZnSe system. Jpn J Appl Phys, 2014, 53: 05FW07
[11]	Schorr S, Tovar M, Sheptyakov D, et al. Crystal structure and cation distribution in the solid solution series 2(ZnX)–CuInX₂ (X=S, Se, Te). J Phys Chem Solids, 2005, 66: 1961 doi: 10.1016/j.jpcs.2005.09.035
[12]	Wibowo R A, Kim K H. Band gap engineering of RF-sputtered CuInZnSe₂ thin films for indium-reduced thin-film solar cell application. Sol Energy Mater Sol Cells, 2009, 93: 941 doi: 10.1016/j.solmat.2008.11.020
[13]	Tseng Y H, Yang C S, Wu C H, et al. Growth mechanism of CuZnInSe₂ thin films grown by molecular beam epitaxy. J Cryst Growth, 2013, 378: 158 doi: 10.1016/j.jcrysgro.2012.12.045
[14]	Guillen C, Herrero J. Zn incorporation and (CuIn)_1−xZn_2xSe₂ thin film formation during the selenization of evaporated Cu and In precursors on Al:ZnO coated glass substrates. J Phys Chem Solids, 2011, 72: 1362 doi: 10.1016/j.jpcs.2011.08.016
[15]	Müller J, Nowoczin J, Schmitt H. Composition, structure and optical properties of sputtered thin films of CuInSe₂. Thin Solid Films, 2006, 496(2): 364 doi: 10.1016/j.tsf.2005.09.077
[16]	Adachi S. Properties of group-IV, III–V and II–VI semiconductors. England: John Wiley & Sons Ltd, 2005
[17]	Kaleli M, Parlak M, Ercelebi C. Studies on device properties of an n-AgIn₅Se₈/p-Si heterojunction diode. Semicond Sci Technol, 2011, 26(10): 105013 doi: 10.1088/0268-1242/26/10/105013
[18]	Colakoglu T, Parlak M. Electrical and photoelectrical properties of Ag–In–Se thin films evaporated by e-beam technique. J Phys D, 2009, 42(3): 035416 doi: 10.1088/0022-3727/42/3/035416
[19]	Roth A. Vacuum Technology. Amsterdam: North Holland, 1980
[20]	Wibowo R A, Kim W S, Lee E S, et al. Single step preparation of quaternary Cu₂ZnSnSe₄ thin films by RF magnetron sputtering from binary chalcogenide targets. J Phys Chem Solids, 2007, 68(10): 1908 doi: 10.1016/j.jpcs.2007.05.022
[21]	Tanino H, Maeda T, Fujikake H, et al. Raman spectra of CuInSe₂. Phys Rev B, 1992, 23: 1323
[22]	Langford J I, Willson a J C. Scherrer after sixty years: A survey and some new results in the determination of crystallite size. J Appl Cryst, 1978, 11: 102 doi: 10.1107/S0021889878012844
[23]	Cullity B D. Elements of X-ray diffraction. USA: Addision-Wesley Publishing, 1967
[24]	Güllü H H, Coskun E, Parlak M. Characterization of co-evaporated Cu–Ag–In–Se thin films. Braz J Phys, 2014, 44(6): 719 doi: 10.1007/s13538-014-0270-2
[25]	Parlak M, Ercelebi C. The effect of substrate and post-annealing temperature on the structural and optical properties of polycrystalline InSe thin films. Thin Solid Films, 1998, 322(1/2): 334
[26]	Lopez-Garcia J, Guillen C. CuIn_1−xAl_xSe₂ thin films obtained by selenization of evaporated metallic precursor layers. Thin Solid Films, 2009, 517(7): 2240 doi: 10.1016/j.tsf.2008.10.095
[27]	Jaffe J E, Zunger A. Theory of the band-gap anomaly in ABC₂ chalcopyrite semiconductors. Phys Rev B, 1984, 29: 1882 doi: 10.1103/PhysRevB.29.1882
[28]	Revathi N, Prathap P, Ramakrishna Reddy K T. Thickness dependent physical properties of close space evaporated In₂S₃ films. Solid State Sci, 2009, 11(7): 1288 doi: 10.1016/j.solidstatesciences.2009.04.019
[29]	Karaagac H, Parlak M. Deposition of AgGaS₂ thin films by double source thermal evaporation technique. J Mater Sci: Mater Electron, 2011, 22: 1426 doi: 10.1007/s10854-011-0325-x
[30]	Bube R H. Photoelectronic properties of semiconductors. Cambridge: Cambridge University Press, 1992
[31]	Bube R H. Photoconductivity of solids. New York: Interscience, 1960

Investigation of post-thermal annealing on material properties of Cu–In–Zn–Se thin films

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