J. Semicond. > 2017, Volume 38 > Issue 4 > 043001, doi: 10.1088/1674-4926/38/4/043001
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SEMICONDUCTOR MATERIALS

Electrical and optical property of annealed Te-doped GaSb

Jie Su1, 2, 3, Tong Liu1, Jingming Liu1, Jun Yang1, Guiying Shen1, 2, Yongbiao Bai1, 2, Zhiyuan Dong1, Fangfang Wang4 and Youwen Zhao1, 2,

+ Author Affiliations

 Corresponding author: Zhao Youwen, Email: zhaoyw@semi.ac.cn

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Abstract: GaSb is the most suitable substrate in the epitaxial growth of mixed semiconductors of GaSb system. In this work, Te-doped GaSb bulk crystals with different doping concentration have been annealed at 550 ℃ for 100 h in ambient antimony. The annealed samples have been studied by Hall effect measurement, infrared (IR) optical transmission, Glow discharge mass spectroscopy (GDMS) and photoluminescence (PL) spectroscopy. After annealing, Te-doped GaSb samples exhibit a decrease of carrier concentration and increase of mobility, along with an improvement of below gap IR transmission. Native acceptor related electrical compensation analysis suggests a formation of donor defect with deeper energy level. The mechanism of the variation of the defect and its influence on the material properties are discussed.

Key words: Te-doped GaSb, annealing, Hall effect measurement, photoluminescence spectroscopy, IR optical transmission



[1]
Dutta P S, Bhat H L. The physics and technology of gallium antimonide: an emerging optoelectronic material. J Appl Phys 1997, 81: 5821 doi: 10.1063/1.365356
[2]
Milne A G, Polyako A Y. Gallium antimonide device related properties. Solid-State Electron, 1993, 36: 803 doi: 10.1016/0038-1101(93)90002-8
[3]
Lee M, Nicholas D J, Singer K E, et al. A photoluminescence and Hall effect study of GaSb grown by molecular beam epitaxy. J Appl Phys, 1986, 59: 2895 doi: 10.1063/1.336948
[4]
Tao D Y, Cheng Y, Liu J M, et al. Chemical and electrical properties of (NH4)2S passivated GaSb surface. J Semicond, 2015, 36(7): 073006 doi: 10.1088/1674-4926/36/7/073006
[5]
Segawa K, Miki H, Otsubo M, et al. Coherent Gunn oscillations in GaxIn1-xSb. Electron Lett, 1976, 12: 124 doi: 10.1049/el:19760098
[6]
Hilderbrand O, Kuebart W, Benz K W, et al. Ga1-xAlxSb avalanche photodiodes resonant impact ionization with very high ratio of ionization coefficients. IEEE J Quantum Electron, 1981, 17: 284 doi: 10.1109/JQE.1981.1071068
[7]
Esaki L. InAs-GaSb superlattices-synthesized semiconductors and semimetals. J Cryst Growth, 1981, 52: 227 doi: 10.1016/0022-0248(81)90198-6
[8]
Passlack M, Schubert E F, Hobson W S, et al. Ga2O3 films for electronic and optoelectronic applications. J Appl Phys, 1995, 77: 686 doi: 10.1063/1.359055
[9]
Van Der Mbulen Y J. Growth properties of GaSb: the structure of the residual acceptor centres. J Phys Chem Solids, 1967, 28: 25 doi: 10.1016/0022-3697(67)90193-X
[10]
Briggs A G, Challis L J, Phonon scattering by acceptor defects in GaSb and GaSb-InSb alloys. J Phys C, 1969, 2: 1353 doi: 10.1088/0022-3719/2/7/128
[11]
Vlasov A S, Rakova E P, Khvostikov V P, et al. Native defect concentration in Czochralski-grown Te-doped GaSb by photoluminescence. Sol Energy Mater Sol Cells, 2010, 94: 1113 doi: 10.1016/j.solmat.2010.02.038
[12]
Chen X F, Chen N F, Wang J L, et al. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions. J Semicond, 2009, 30: 083006 doi: 10.1088/1674-4926/30/8/083006
[13]
Reijnen L, Brunton R, Grant I R. GaSb single-crystal growth by vertical gradient freeze. J Cryst Growth, 2005, 275: e595 doi: 10.1016/j.jcrysgro.2004.11.003
[14]
Lui M K, Ling C C. Liquid encapsulated Czochralski grown undoped p-type gallium antimonide studied by temperature-dependent Hall measurement. Semicond Sci Tech, 2005, 20: 1157 doi: 10.1088/0268-1242/20/12/002
[15]
Ling C C, Lui M K, Ma S K, et al. Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide. Appl Phys Lett, 2004, 85: 384 doi: 10.1063/1.1773934
[16]
Sestakova V, Stepanek B. Doping of GaSb single crystals with various elements. J Cryst Growth, 1995, 146: 87 doi: 10.1016/0022-0248(94)00485-4
[17]
Levinshtein M, Rumyantskv S, Shur M. Handbook series on semiconductor parameters. Vol 2. Singapore: World Scientific, 1999
[18]
Liu N K, Zhu B S, Luo J S. Semiconductor physics. Beijing: Publishing House of Electronics Industry, 2008
[19]
Wu M C, Chen C C. Photoluminescence of liquid-phase epitaxial Te-doped GaSb. J Appl Phys, 1993, 73: 8495 doi: 10.1063/1.354085
[20]
Chandola A, Pino R, Dutta P S. Below bandgap optical absorption in tellurium-doped GaSb. Semicond Sci Tech, 2005, 20: 886 doi: 10.1088/0268-1242/20/8/046
[21]
Sharma P C, Verma G S. Hall coefficient, mobility, and resistivity of Te-doped GaSb samples. Phys Rev B, 1972, 5: 1535 doi: 10.1103/PhysRevB.5.1535
[22]
Lee M, Nicholas D J, Singer K E, et al. A photoluminescence and Hall-effect study of GaSb grown by molecular-beam epitaxy. J Appl Phys, 1986, 59: 2895 doi: 10.1063/1.336948
[23]
Kyuregya A S, Lazareva I K, Stuchebn V M, et al. Photoluminescence of gallium antimonide at high excitation levels.1. lightly doped GaSb. Sov Phys Semicond, 1972, 6: 208 https://www.researchgate.net/publication/292011201_PHOTOLUMINESCENCE_OF_GALLIUM_ANTIMONIDE_AT_HIGH_EXCITATION_LEVELS_-_2_HEAVILY_DOPED_GaSb
[24]
Iyer S, Small L, Hegde S M, et al. Low-temperature photoluminescence of Te-doped GaSb grown by liquid phase electroepitaxy. J Appl Phys, 1995, 77: 5902 doi: 10.1063/1.359170
[25]
Dutta P S, Koteswara Rao K S R, Bhat H L, et al. Photoluminescence studies in bulk gallium antimonide. Appl Phys A, 1995, 61: 149 doi: 10.1007/BF01538381
[26]
Nicholas D J, Lee M, Hamilton B, et al. Spectroscopic studies of shallow defects in MBE GaSb. J Cryst Growth, 1987, 81: 298 doi: 10.1016/0022-0248(87)90408-8
[27]
Hakala M, Puska M J, Nieminen R M. Native defects and self-diffusion in GaSb. J Appl Phys, 2002, 91: 4988 doi: 10.1063/1.1462844
[28]
Krause-Rehberg R, Leipner H S, Kupsch A, et al. Positron study of defects in as-grown and plastically deformed GaAs:Te. Phys Rev B, 1994, 49: 2385 doi: 10.1103/PhysRevB.49.2385
Fig. 1.  PL spectra of Te-doped GaSb samples: (a) G40-10-30, (b) G40-12-49, and (c) G40-12-45, taken at 10 K. The solid lines are the best-fit curves which correspond to the as-grown GaSb samples. The spectra reveal emission bands centered at 715, 726, and 744 meV, respectively. The dashed lines are the best-fit curves which correspond to the annealed GaSb samples. The spectra show that the emission bands all appear at 710 meV.

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Fig. 2.  FTIR transmission spectra of the n-type Te-doped GaSb samples: (a) G40-10-30, (b) G40-12-49, and (c) G40-12-45, taken in atmospheric conditions at 300 K. The red solid lines correspond to the transmission spectrum of the as-grown GaSb samples. The black lines correspond to the annealed GaSb samples.

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Table 2.   Electrical properties of as-grown and annealed GaSb samples at 300 K.

Table 1.   The calculated results in as-grown Te-doped GaSb samples.

Table 3.   The Glow discharge mass spectrometry (GDMS) of annealed GaSb sample.
[1]
Dutta P S, Bhat H L. The physics and technology of gallium antimonide: an emerging optoelectronic material. J Appl Phys 1997, 81: 5821 doi: 10.1063/1.365356
[2]
Milne A G, Polyako A Y. Gallium antimonide device related properties. Solid-State Electron, 1993, 36: 803 doi: 10.1016/0038-1101(93)90002-8
[3]
Lee M, Nicholas D J, Singer K E, et al. A photoluminescence and Hall effect study of GaSb grown by molecular beam epitaxy. J Appl Phys, 1986, 59: 2895 doi: 10.1063/1.336948
[4]
Tao D Y, Cheng Y, Liu J M, et al. Chemical and electrical properties of (NH4)2S passivated GaSb surface. J Semicond, 2015, 36(7): 073006 doi: 10.1088/1674-4926/36/7/073006
[5]
Segawa K, Miki H, Otsubo M, et al. Coherent Gunn oscillations in GaxIn1-xSb. Electron Lett, 1976, 12: 124 doi: 10.1049/el:19760098
[6]
Hilderbrand O, Kuebart W, Benz K W, et al. Ga1-xAlxSb avalanche photodiodes resonant impact ionization with very high ratio of ionization coefficients. IEEE J Quantum Electron, 1981, 17: 284 doi: 10.1109/JQE.1981.1071068
[7]
Esaki L. InAs-GaSb superlattices-synthesized semiconductors and semimetals. J Cryst Growth, 1981, 52: 227 doi: 10.1016/0022-0248(81)90198-6
[8]
Passlack M, Schubert E F, Hobson W S, et al. Ga2O3 films for electronic and optoelectronic applications. J Appl Phys, 1995, 77: 686 doi: 10.1063/1.359055
[9]
Van Der Mbulen Y J. Growth properties of GaSb: the structure of the residual acceptor centres. J Phys Chem Solids, 1967, 28: 25 doi: 10.1016/0022-3697(67)90193-X
[10]
Briggs A G, Challis L J, Phonon scattering by acceptor defects in GaSb and GaSb-InSb alloys. J Phys C, 1969, 2: 1353 doi: 10.1088/0022-3719/2/7/128
[11]
Vlasov A S, Rakova E P, Khvostikov V P, et al. Native defect concentration in Czochralski-grown Te-doped GaSb by photoluminescence. Sol Energy Mater Sol Cells, 2010, 94: 1113 doi: 10.1016/j.solmat.2010.02.038
[12]
Chen X F, Chen N F, Wang J L, et al. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions. J Semicond, 2009, 30: 083006 doi: 10.1088/1674-4926/30/8/083006
[13]
Reijnen L, Brunton R, Grant I R. GaSb single-crystal growth by vertical gradient freeze. J Cryst Growth, 2005, 275: e595 doi: 10.1016/j.jcrysgro.2004.11.003
[14]
Lui M K, Ling C C. Liquid encapsulated Czochralski grown undoped p-type gallium antimonide studied by temperature-dependent Hall measurement. Semicond Sci Tech, 2005, 20: 1157 doi: 10.1088/0268-1242/20/12/002
[15]
Ling C C, Lui M K, Ma S K, et al. Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide. Appl Phys Lett, 2004, 85: 384 doi: 10.1063/1.1773934
[16]
Sestakova V, Stepanek B. Doping of GaSb single crystals with various elements. J Cryst Growth, 1995, 146: 87 doi: 10.1016/0022-0248(94)00485-4
[17]
Levinshtein M, Rumyantskv S, Shur M. Handbook series on semiconductor parameters. Vol 2. Singapore: World Scientific, 1999
[18]
Liu N K, Zhu B S, Luo J S. Semiconductor physics. Beijing: Publishing House of Electronics Industry, 2008
[19]
Wu M C, Chen C C. Photoluminescence of liquid-phase epitaxial Te-doped GaSb. J Appl Phys, 1993, 73: 8495 doi: 10.1063/1.354085
[20]
Chandola A, Pino R, Dutta P S. Below bandgap optical absorption in tellurium-doped GaSb. Semicond Sci Tech, 2005, 20: 886 doi: 10.1088/0268-1242/20/8/046
[21]
Sharma P C, Verma G S. Hall coefficient, mobility, and resistivity of Te-doped GaSb samples. Phys Rev B, 1972, 5: 1535 doi: 10.1103/PhysRevB.5.1535
[22]
Lee M, Nicholas D J, Singer K E, et al. A photoluminescence and Hall-effect study of GaSb grown by molecular-beam epitaxy. J Appl Phys, 1986, 59: 2895 doi: 10.1063/1.336948
[23]
Kyuregya A S, Lazareva I K, Stuchebn V M, et al. Photoluminescence of gallium antimonide at high excitation levels.1. lightly doped GaSb. Sov Phys Semicond, 1972, 6: 208 https://www.researchgate.net/publication/292011201_PHOTOLUMINESCENCE_OF_GALLIUM_ANTIMONIDE_AT_HIGH_EXCITATION_LEVELS_-_2_HEAVILY_DOPED_GaSb
[24]
Iyer S, Small L, Hegde S M, et al. Low-temperature photoluminescence of Te-doped GaSb grown by liquid phase electroepitaxy. J Appl Phys, 1995, 77: 5902 doi: 10.1063/1.359170
[25]
Dutta P S, Koteswara Rao K S R, Bhat H L, et al. Photoluminescence studies in bulk gallium antimonide. Appl Phys A, 1995, 61: 149 doi: 10.1007/BF01538381
[26]
Nicholas D J, Lee M, Hamilton B, et al. Spectroscopic studies of shallow defects in MBE GaSb. J Cryst Growth, 1987, 81: 298 doi: 10.1016/0022-0248(87)90408-8
[27]
Hakala M, Puska M J, Nieminen R M. Native defects and self-diffusion in GaSb. J Appl Phys, 2002, 91: 4988 doi: 10.1063/1.1462844
[28]
Krause-Rehberg R, Leipner H S, Kupsch A, et al. Positron study of defects in as-grown and plastically deformed GaAs:Te. Phys Rev B, 1994, 49: 2385 doi: 10.1103/PhysRevB.49.2385

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    Received: 27 April 2016 Revised: 20 June 2016 Online: Published: 01 April 2017

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      Article Navigation >  Journal of Semiconductors  > 2017  >  38(4): 043001
      Jie Su, Tong Liu, Jingming Liu, Jun Yang, Guiying Shen, Yongbiao Bai, Zhiyuan Dong, Fangfang Wang, Youwen Zhao. Electrical and optical property of annealed Te-doped GaSb[J]. Journal of Semiconductors, 2017, 38(4): 043001. doi: 10.1088/1674-4926/38/4/043001 J Su, T Liu, J M Liu, J Yang, G Y Shen, Y B Bai, Z Y Dong, F F Wang, Y W Zhao. Electrical and optical property of annealed Te-doped GaSb[J]. J. Semicond., 2017, 38(4): 043001. doi: 10.1088/1674-4926/38/4/043001.Export: BibTex EndNote
      Citation:
      Jie Su, Tong Liu, Jingming Liu, Jun Yang, Guiying Shen, Yongbiao Bai, Zhiyuan Dong, Fangfang Wang, Youwen Zhao. Electrical and optical property of annealed Te-doped GaSb[J]. Journal of Semiconductors, 2017, 38(4): 043001. doi: 10.1088/1674-4926/38/4/043001

      J Su, T Liu, J M Liu, J Yang, G Y Shen, Y B Bai, Z Y Dong, F F Wang, Y W Zhao. Electrical and optical property of annealed Te-doped GaSb[J]. J. Semicond., 2017, 38(4): 043001. doi: 10.1088/1674-4926/38/4/043001.
      Export: BibTex EndNote
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      Electrical and optical property of annealed Te-doped GaSb

      doi: 10.1088/1674-4926/38/4/043001
      • 1.

        Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 2.

        College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

      • 3.

        Inner Mongolia Aerospace Honggang Machinery Corporation Limited, Hohhot 010020, China

      • 4.

        Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

      Funds:

      the National Natural Science Foundation of China 61474104

      the National Natural Science Foundation of China 61504131

      Project supported by the National Natural Science Foundation of China (Nos. 61474104, 61504131)

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      • Corresponding author: Zhao Youwen, Email: zhaoyw@semi.ac.cn
      • Received Date: 2016-04-27
      • Revised Date: 2016-06-20
      • Published Date: 2017-04-01

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