J. Semicond. > 2017, Volume 38 > Issue 5 > 054003, doi: 10.1088/1674-4926/38/5/054003
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SEMICONDUCTOR DEVICES

Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures

Abdulkerim Karabulut1, , Hasan Efeoglu2 and Abdulmecit Turut3

+ Author Affiliations

 Corresponding author: Abdulkerim Karabulut, Email: akerimkara@gmail.com

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Abstract: The Au/Ti/n-GaAs structures with and without Al2O3 interfacial layer have been fabricated.The Al2O3 interfacial layer has been formed on the GaAs substrate by atomic layer deposition.The effects of the interfacial layer on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the devices have been investigated in the temperature range of 60-300 K.It has been seen that the carrier concentration from C-V characteristics for the MIS (metal/insulating layer/semiconductor) diode with Al2O3 interfacial layer has a higher value than that for the reference diode without the Al2O3 interfacial layer (MS).Such a difference in the doping concentration has been attributed not to doping variation in the semiconductor bulk but to the presence of the Al2O3 interfacial layer because both diodes have been made on the pieces cut from the same n-type GaAs wafer.The temperaturedependent I-V characteristics of the MIS diode do not obey the thermionic emission current theory because of the presence of the Al2O3 layer.An electron tunneling factor, aδ (χ)1/2, value of 20.64 has been found from the I-V-T data of the MIS diode.An average value of 0.627 eV for the mean tunneling barrier height, χ, presented by the Al2O3 layer has been obtained.

Key words: metal-insulating layer-semiconductor contacts, atomic layer deposition, Schottky diodes, barrier inhomogeneity



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Fig. 1.  (Color online) Schematic model of the Au/Ti/Al2O3/n-GaAs structure

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Fig. 2.  (Color online) (a) AFM surface images with 3D of the GaAs. (b) 3D AFM surface images of 10 nm thick Al2O3 on GaAs.

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Fig. 3.  (Color online) Current-voltage curves for the reference Au/Ti/n-GaAs and MIS Au/Ti/Al2O3/n-GaAs structures in the temperature range of 60-300 K with steps of 20 K.

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Fig. 4.  (Color online) Diffusion potential variations for low-SBH circular patches under the bias voltage, from the reverse bias of-0.30 V to forward bias of 0.30 V with the steps of 0.10 V, as a function of the distance z from the MS interface toward the semiconductor. These curves are plotted using Eq. (6) in the text. Note that the saddle-point potential rises with forward bias and decreases with reverse bias, leading to unsaturated reverse current.

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Fig. 5.  (Color online) Experimental current versus $({kT})^{-1} $ curves with the forward bias as a parameter for the MIS Au/Ti/Al2O3/n-GaAs structure in the temperature range of 60-300 K.

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Fig. 6.  (Color online) Experimental forward bias current-voltage curve and the fit in each region for the Au/Ti/Al2O3/n-GaAs structure at temperature of 180 K.

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Fig. 7.  (Color online) Experimental forward bias current-voltage curve and the fit in each region for the MIS Au/Ti/Al2O3/n-GaAs structure at 300 K.

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Fig. 8.  (Color online) Experimental forward bias barrier height versus temperature curves for the MIS structure.

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Fig. 9.  (Color online) Temperature-dependent capacitance curves for the reference and MIS structures at 1.0 MHz and various bias voltages.

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Fig. 10.  (Color online) C-2-V plots for the reference Au/Ti/n-GaAs structure at 1.0 MHz and various temperatures.

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Fig. 11.  (Color online) C-2-V plots for the MIS Au/Ti/Al2O3/n-GaAs structure at 1.0 MHz and some temperatures.

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Fig. 12.  (Color online) Temperature-dependent carrier concentrations from C-2-V plots at 1.0 MHz, for the reference and structures.

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Table 1.   Experimental diode parameters from C-2-V characteristics for the reference Au/Ti/n-GaAs and MIS Au/Ti/Al2O3/n-GaAs structures in the temperature range of 60-300 K with steps of 20 K. The data of the Ⅱ. CV region corresponding to (-0.7 V)-(+0.2 V) range in the C-2-V curve at any temperature were given in the table. Vn is the potential difference between Fermi level and the conduction band edge in the neutral region.
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    Received: 16 September 2016 Revised: 23 November 2016 Online: Published: 01 May 2017

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      Abdulkerim Karabulut, Hasan Efeoglu, Abdulmecit Turut. Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures[J]. Journal of Semiconductors, 2017, 38(5): 054003. doi: 10.1088/1674-4926/38/5/054003 A Karabulut, H Efeoglu, A Turut. Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures[J]. J. Semicond., 2017, 38(5): 054003. doi: 10.1088/1674-4926/38/5/054003.Export: BibTex EndNote
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      Abdulkerim Karabulut, Hasan Efeoglu, Abdulmecit Turut. Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures[J]. Journal of Semiconductors, 2017, 38(5): 054003. doi: 10.1088/1674-4926/38/5/054003

      A Karabulut, H Efeoglu, A Turut. Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures[J]. J. Semicond., 2017, 38(5): 054003. doi: 10.1088/1674-4926/38/5/054003.
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      Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures

      doi: 10.1088/1674-4926/38/5/054003
      • 1.

        Sinop University, Faculty of Engineering, Department of Electrical and Electronics Engineering, Sinop, Turkey

      • 2.

        Atatürk University, Faculty of Engineering, Department of Electrical and Electronics Engineering, TR-25240 Erzurum, Turkey

      • 3.

        Istanbul Medeniyet University, Faculty of Engineering and Natural Sciences, Engineering Physics Department, TR-34730Istanbul, Turkey

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      • Corresponding author: Abdulkerim Karabulut, Email: akerimkara@gmail.com
      • Received Date: 2016-09-16
      • Revised Date: 2016-11-23
      • Published Date: 2017-05-01

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