Fig. 1.
(Color online) DECODER circuit using NAND gate without SLEEP transistor.
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| Citation: |
Neha Gupta, Priyanka Parihar, Vaibhav Neema. Application of source biasing technique for energy efficient DECODER circuit design: memory array application[J]. Journal of Semiconductors, 2018, 39(4): 045001. doi: 10.1088/1674-4926/39/4/045001
N Gupta, P Parihar, V Neema. Application of source biasing technique for energy efficient DECODER circuit design: memory array application[J]. J. Semicond., 2018, 39(4): 045001. doi: 10.1088/1674-4926/39/4/045001.
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Application of source biasing technique for energy efficient DECODER circuit design: memory array application
doi: 10.1088/1674-4926/39/4/045001
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Abstract
Researchers have proposed many circuit techniques to reduce leakage power dissipation in memory cells. If we want to reduce the overall power in the memory system, we have to work on the input circuitry of memory architecture i.e. row and column decoder. In this research work, low leakage power with a high speed row and column decoder for memory array application is designed and four new techniques are proposed. In this work, the comparison of cluster DECODER, body bias DECODER, source bias DECODER, and source coupling DECODER are designed and analyzed for memory array application. Simulation is performed for the comparative analysis of different DECODER design parameters at 180 nm GPDK technology file using the CADENCE tool. Simulation results show that the proposed source bias DECODER circuit technique decreases the leakage current by 99.92% and static energy by 99.92% at a supply voltage of 1.2 V. The proposed circuit also improves dynamic power dissipation by 5.69%, dynamic PDP/EDP 65.03% and delay 57.25% at 1.2 V supply voltage.-
Keywords:
- SRAM,
- leakage current,
- delay,
- SLEEP transistor
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References
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