Magneto-transport properties of the off-stoichiometric Co<sub>2</sub>MnAl film epitaxially grown on GaAs (001)

Zhifeng Yu; Hailong Wang; Jialin Ma; Shucheng Tong; Jianhua Zhao

doi:10.1088/1674-4926/40/5/052501

J. Semicond. > 2019, Volume 40 > Issue 5 > 052501, doi: 10.1088/1674-4926/40/5/052501

ARTICLES

Magneto-transport properties of the off-stoichiometric Co₂MnAl film epitaxially grown on GaAs (001)

Zhifeng Yu^{1, 2}, Hailong Wang^{1, 2}, Jialin Ma^{1, 2}, Shucheng Tong^{1, 2} and Jianhua Zhao^{1, 2,}

+ Author Affiliations

Corresponding author: Jianhua Zhao, E-mail: jhzhao@red.semi.ac.cn

Abstract: We have investigated the magneto-transport properties of an off-stoichiometric full-Heusler alloy Co₂MnAl single-crystalline film. The Co_1.65Mn_1.35Al (CMA) film epitaxially grown on Ⅲ–Ⅴ semiconductor GaAs substrate exhibits perpendicular magnetic anisotropy. The resistivity of the CMA film increases with the temperature T decreasing from 300 to 5 K, showing a semiconducting-like transport behavior. Different activation energies are found in three temperature regions with transition temperatures of 35 and 110 K. In the meanwhile, the remanent magnetization can be described by T^3/2 and T² laws in the corresponding medium and high T ranges, respectively. The transition at around 110 K could be attributed to the ferromagnetism evolving from localized to itinerant state. The Curie temperature of the CMA film is estimated to be ~640 K. The intrinsic anomalous Hall conductivity of ~55 Ω^–1cm^–1 is obtained, which is almost twenty times smaller than that of Co₂MnAl.

Key words: full-Heusler alloy, magneto-transport property, activation model, molecular-beam epitaxy

References

[1]	De Groot R A, Mueller F M, Van Engen P G, et al. New class of materials: half-metallic ferromagnets. Phys Rev Lett, 1983, 50(25), 2024 doi: 10.1103/PhysRevLett.50.2024
[2]	Trudel S, Gaier O, Hamrle J, et al. Magnetic anisotropy, exchange and damping in cobalt-based full-Heusler compounds: an experimental review. J Phys D, 2010, 43(19), 193001 doi: 10.1088/0022-3727/43/19/193001
[3]	Wollmann L, Nayak A K, Parkin S S P, et al. Heusler 4.0: tunable materials. Ann Rev Mater Res, 2017, 47, 247 doi: 10.1146/annurev-matsci-070616-123928
[4]	Nayak A K, Nicklas M, Chadov S, et al. Design of compensated ferrimagnetic Heusler alloys for giant tunable exchange bias. Nat Mater, 2015, 14(7), 679 doi: 10.1038/nmat4248
[5]	Gueye M, Wague B M, Zighem F, et al. Bending strain-tunable magnetic anisotropy in Co₂FeAl Heusler thin film on Kapton. Appl Phys Lett, 2014, 105(6), 062409 doi: 10.1063/1.4893157
[6]	Zhang B, Wang H L, Cao J, et al. Control of magnetic anisotropy in epitaxial Co₂MnAl thin films through piezo-voltage-induced strain. J Appl Phys, 2019, 125(8), 082503 doi: 10.1063/1.5039430
[7]	Picozzi S, Continenza A, Freeman A J. Co₂MnX (X= Si, Ge, Sn) Heusler compounds: An ab initio study of their structural, electronic, and magnetic properties at zero and elevated pressure. Phys Rev B, 2002, 66(9), 094421 doi: 10.1103/PhysRevB.66.094421
[8]	Ouardi S, Fecher G H, Felser C, et al. Realization of spin gapless semiconductors: The Heusler compound Mn₂CoAl. Phys Rev Lett, 2013, 110(10), 100401 doi: 10.1103/PhysRevLett.110.100401
[9]	Jamer M E, Assaf B A, Devakul T, et al. Magnetic and transport properties of Mn₂CoAl oriented films. Appl Phys Lett, 2013, 103(14), 142403 doi: 10.1063/1.4823601
[10]	Xu G Z, Du Y, Zhang X M, et al. Magneto-transport properties of oriented Mn₂CoAl films sputtered on thermally oxidized Si substrates. Appl Phys Lett, 2014, 104(24), 242408 doi: 10.1063/1.4884203
[11]	Feng Y, Zhou T, Chen X, et al. The effect of Mn content on magnetism and half-metallicity of off-stoichiometric Co₂MnAl. JMMM, 2015, 387, 118 doi: 10.1016/j.jmmm.2015.04.002
[12]	Zhang X, Cheng Y, Zhao W, et al. Exploring potentials of perpendicular magnetic anisotropy stt-mram for cache design. IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014, 1
[13]	Meng K K, Miao J, Xu X, et al. Thickness dependence of magnetic anisotropy and intrinsic anomalous Hall effect in epitaxial Co₂MnAl film. Phys Lett A, 2017, 381(13), 1202 doi: 10.1016/j.physleta.2017.02.004
[14]	Gofryk K, Kaczorowski D, Plackowski T, et al. Magnetic and transport properties of the rare-earth-based Heusler phases R Pd Z and R Pd 2 Z (Z= Sb, Bi). Phys Rev B, 2005, 72(9), 094409 doi: 10.1103/PhysRevB.72.094409
[15]	Raquet B, Viret M, Warin P, et al. Negative high field magnetoresistance in 3d ferromagnets. Physica B, 2001, 294, 102 doi: 10.1016/S0921-4526(00)00618-9
[16]	Hordequin C, Pierre J, Currat R. Magnetic excitations in the half-metallic NiMnSb ferromagnet: From Heisenberg-type to itinerant behaviour. JMMM, 1996, 162(1), 75 doi: 10.1016/0304-8853(96)00074-1
[17]	Du Y, Xu G Z, Zhang X M, et al. Crossover of magnetoresistance in the zero-gap half-metallic Heusler alloy Fe₂CoSi . Europhys Lett, 2013, 103(3), 37011 doi: 10.1209/0295-5075/103/37011
[18]	Ishikawa Y, Shirane G, Tarvin J A, et al. Magnetic excitations in the weak itinerant ferromagnet MnSi. Phys Rev B, 1977, 16(11), 4956 doi: 10.1103/PhysRevB.16.4956
[19]	Wohlfarth E P. Very weak itinerant ferromagnets application to ZrZn₂. J Appl Phys, 1968, 39(2), 106 doi: 10.1063/1.1656163
[20]	Nagaosa N, Sinova J, Onoda S, et al. Anomalous hall effect. Rev Modern Phys, 2010, 82(2), 1539 doi: 10.1103/RevModPhys.82.1539
[21]	Tian Y, Ye L, Jin X. Proper scaling of the anomalous Hall effect. Phys Rev Lett, 2009, 103(8), 087206 doi: 10.1103/PhysRevLett.103.087206

Fig. 1. (Color online) (a) T dependence of the zero-field ρ_xx varying from 5 to 300 K. The fitting curves using activation model in different T regions are plotted in red, blue and green lines, respectively. The inset gives a linear relation between ln(Δσ_xx) and 1/T in the corresponding T ranges. (b) The MR at several selected temperatures. The inset shows the temperature dependence of MR at specific applied field.

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Fig. 2. (Color online) T dependence of M varying from 5 to 280 K. (a) The fitting curves using T², T^3/2 and exponential dependences in different T regions are plotted in red, blue and green lines, respectively. The formulas describing M(T) in corresponding T regions are shown. (b) The linear relations of ln(1–M(T)²/M(0)²) (red line) and ln(1–M(T)/M(0)) (blue line) versus T.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) (a) ρ_xy(H) varying with H and T after the subtraction of the background signals originated from ρ_xx. The inset shows the hysteresis loop at 5 K perpendicular and parallel to the film plane. (b) The relation between ρ_AH and ρ_xx². The slope value is estimated to be about 55 Ω^–1cm^–1.

DownLoad: Full-Size Img PowerPoint

[1]	De Groot R A, Mueller F M, Van Engen P G, et al. New class of materials: half-metallic ferromagnets. Phys Rev Lett, 1983, 50(25), 2024 doi: 10.1103/PhysRevLett.50.2024
[2]	Trudel S, Gaier O, Hamrle J, et al. Magnetic anisotropy, exchange and damping in cobalt-based full-Heusler compounds: an experimental review. J Phys D, 2010, 43(19), 193001 doi: 10.1088/0022-3727/43/19/193001
[3]	Wollmann L, Nayak A K, Parkin S S P, et al. Heusler 4.0: tunable materials. Ann Rev Mater Res, 2017, 47, 247 doi: 10.1146/annurev-matsci-070616-123928
[4]	Nayak A K, Nicklas M, Chadov S, et al. Design of compensated ferrimagnetic Heusler alloys for giant tunable exchange bias. Nat Mater, 2015, 14(7), 679 doi: 10.1038/nmat4248
[5]	Gueye M, Wague B M, Zighem F, et al. Bending strain-tunable magnetic anisotropy in Co₂FeAl Heusler thin film on Kapton. Appl Phys Lett, 2014, 105(6), 062409 doi: 10.1063/1.4893157
[6]	Zhang B, Wang H L, Cao J, et al. Control of magnetic anisotropy in epitaxial Co₂MnAl thin films through piezo-voltage-induced strain. J Appl Phys, 2019, 125(8), 082503 doi: 10.1063/1.5039430
[7]	Picozzi S, Continenza A, Freeman A J. Co₂MnX (X= Si, Ge, Sn) Heusler compounds: An ab initio study of their structural, electronic, and magnetic properties at zero and elevated pressure. Phys Rev B, 2002, 66(9), 094421 doi: 10.1103/PhysRevB.66.094421
[8]	Ouardi S, Fecher G H, Felser C, et al. Realization of spin gapless semiconductors: The Heusler compound Mn₂CoAl. Phys Rev Lett, 2013, 110(10), 100401 doi: 10.1103/PhysRevLett.110.100401
[9]	Jamer M E, Assaf B A, Devakul T, et al. Magnetic and transport properties of Mn₂CoAl oriented films. Appl Phys Lett, 2013, 103(14), 142403 doi: 10.1063/1.4823601
[10]	Xu G Z, Du Y, Zhang X M, et al. Magneto-transport properties of oriented Mn₂CoAl films sputtered on thermally oxidized Si substrates. Appl Phys Lett, 2014, 104(24), 242408 doi: 10.1063/1.4884203
[11]	Feng Y, Zhou T, Chen X, et al. The effect of Mn content on magnetism and half-metallicity of off-stoichiometric Co₂MnAl. JMMM, 2015, 387, 118 doi: 10.1016/j.jmmm.2015.04.002
[12]	Zhang X, Cheng Y, Zhao W, et al. Exploring potentials of perpendicular magnetic anisotropy stt-mram for cache design. IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014, 1
[13]	Meng K K, Miao J, Xu X, et al. Thickness dependence of magnetic anisotropy and intrinsic anomalous Hall effect in epitaxial Co₂MnAl film. Phys Lett A, 2017, 381(13), 1202 doi: 10.1016/j.physleta.2017.02.004
[14]	Gofryk K, Kaczorowski D, Plackowski T, et al. Magnetic and transport properties of the rare-earth-based Heusler phases R Pd Z and R Pd 2 Z (Z= Sb, Bi). Phys Rev B, 2005, 72(9), 094409 doi: 10.1103/PhysRevB.72.094409
[15]	Raquet B, Viret M, Warin P, et al. Negative high field magnetoresistance in 3d ferromagnets. Physica B, 2001, 294, 102 doi: 10.1016/S0921-4526(00)00618-9
[16]	Hordequin C, Pierre J, Currat R. Magnetic excitations in the half-metallic NiMnSb ferromagnet: From Heisenberg-type to itinerant behaviour. JMMM, 1996, 162(1), 75 doi: 10.1016/0304-8853(96)00074-1
[17]	Du Y, Xu G Z, Zhang X M, et al. Crossover of magnetoresistance in the zero-gap half-metallic Heusler alloy Fe₂CoSi . Europhys Lett, 2013, 103(3), 37011 doi: 10.1209/0295-5075/103/37011
[18]	Ishikawa Y, Shirane G, Tarvin J A, et al. Magnetic excitations in the weak itinerant ferromagnet MnSi. Phys Rev B, 1977, 16(11), 4956 doi: 10.1103/PhysRevB.16.4956
[19]	Wohlfarth E P. Very weak itinerant ferromagnets application to ZrZn₂. J Appl Phys, 1968, 39(2), 106 doi: 10.1063/1.1656163
[20]	Nagaosa N, Sinova J, Onoda S, et al. Anomalous hall effect. Rev Modern Phys, 2010, 82(2), 1539 doi: 10.1103/RevModPhys.82.1539
[21]	Tian Y, Ye L, Jin X. Proper scaling of the anomalous Hall effect. Phys Rev Lett, 2009, 103(8), 087206 doi: 10.1103/PhysRevLett.103.087206

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Received: 22 April 2019 Revised: Online: Accepted Manuscript: 30 April 2019Uncorrected proof: 30 April 2019Published: 08 May 2019

Article Navigation > Journal of Semiconductors > 2019 > 40(5): 052501

Zhifeng Yu, Hailong Wang, Jialin Ma, Shucheng Tong, Jianhua Zhao. Magneto-transport properties of the off-stoichiometric Co2MnAl film epitaxially grown on GaAs (001)[J]. Journal of Semiconductors, 2019, 40(5): 052501. doi: 10.1088/1674-4926/40/5/052501 Z F Yu, H L Wang, J L Ma, S C Tong, J H Zhao, Magneto-transport properties of the off-stoichiometric Co2MnAl film epitaxially grown on GaAs (001)[J]. J. Semicond., 2019, 40(5): 052501. doi: 10.1088/1674-4926/40/5/052501.Export: BibTex EndNote

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Zhifeng Yu, Hailong Wang, Jialin Ma, Shucheng Tong, Jianhua Zhao. Magneto-transport properties of the off-stoichiometric Co₂MnAl film epitaxially grown on GaAs (001)[J]. Journal of Semiconductors, 2019, 40(5): 052501. doi: 10.1088/1674-4926/40/5/052501

Z F Yu, H L Wang, J L Ma, S C Tong, J H Zhao, Magneto-transport properties of the off-stoichiometric Co2MnAl film epitaxially grown on GaAs (001)[J]. J. Semicond., 2019, 40(5): 052501. doi: 10.1088/1674-4926/40/5/052501.

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Magneto-transport properties of the off-stoichiometric Co₂MnAl film epitaxially grown on GaAs (001)

doi: 10.1088/1674-4926/40/5/052501

1.
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100190, China

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Corresponding author: E-mail: jhzhao@red.semi.ac.cn
Received Date: 2019-04-22
Published Date: 2019-05-01

Abstract

Abstract

We have investigated the magneto-transport properties of an off-stoichiometric full-Heusler alloy Co₂MnAl single-crystalline film. The Co_1.65Mn_1.35Al (CMA) film epitaxially grown on Ⅲ–Ⅴ semiconductor GaAs substrate exhibits perpendicular magnetic anisotropy. The resistivity of the CMA film increases with the temperature T decreasing from 300 to 5 K, showing a semiconducting-like transport behavior. Different activation energies are found in three temperature regions with transition temperatures of 35 and 110 K. In the meanwhile, the remanent magnetization can be described by T^3/2 and T² laws in the corresponding medium and high T ranges, respectively. The transition at around 110 K could be attributed to the ferromagnetism evolving from localized to itinerant state. The Curie temperature of the CMA film is estimated to be ~640 K. The intrinsic anomalous Hall conductivity of ~55 Ω^–1cm^–1 is obtained, which is almost twenty times smaller than that of Co₂MnAl.
- full-Heusler alloy,
- magneto-transport property,
- activation model,
- molecular-beam epitaxy

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References

[1]	De Groot R A, Mueller F M, Van Engen P G, et al. New class of materials: half-metallic ferromagnets. Phys Rev Lett, 1983, 50(25), 2024 doi: 10.1103/PhysRevLett.50.2024
[2]	Trudel S, Gaier O, Hamrle J, et al. Magnetic anisotropy, exchange and damping in cobalt-based full-Heusler compounds: an experimental review. J Phys D, 2010, 43(19), 193001 doi: 10.1088/0022-3727/43/19/193001
[3]	Wollmann L, Nayak A K, Parkin S S P, et al. Heusler 4.0: tunable materials. Ann Rev Mater Res, 2017, 47, 247 doi: 10.1146/annurev-matsci-070616-123928
[4]	Nayak A K, Nicklas M, Chadov S, et al. Design of compensated ferrimagnetic Heusler alloys for giant tunable exchange bias. Nat Mater, 2015, 14(7), 679 doi: 10.1038/nmat4248
[5]	Gueye M, Wague B M, Zighem F, et al. Bending strain-tunable magnetic anisotropy in Co₂FeAl Heusler thin film on Kapton. Appl Phys Lett, 2014, 105(6), 062409 doi: 10.1063/1.4893157
[6]	Zhang B, Wang H L, Cao J, et al. Control of magnetic anisotropy in epitaxial Co₂MnAl thin films through piezo-voltage-induced strain. J Appl Phys, 2019, 125(8), 082503 doi: 10.1063/1.5039430
[7]	Picozzi S, Continenza A, Freeman A J. Co₂MnX (X= Si, Ge, Sn) Heusler compounds: An ab initio study of their structural, electronic, and magnetic properties at zero and elevated pressure. Phys Rev B, 2002, 66(9), 094421 doi: 10.1103/PhysRevB.66.094421
[8]	Ouardi S, Fecher G H, Felser C, et al. Realization of spin gapless semiconductors: The Heusler compound Mn₂CoAl. Phys Rev Lett, 2013, 110(10), 100401 doi: 10.1103/PhysRevLett.110.100401
[9]	Jamer M E, Assaf B A, Devakul T, et al. Magnetic and transport properties of Mn₂CoAl oriented films. Appl Phys Lett, 2013, 103(14), 142403 doi: 10.1063/1.4823601
[10]	Xu G Z, Du Y, Zhang X M, et al. Magneto-transport properties of oriented Mn₂CoAl films sputtered on thermally oxidized Si substrates. Appl Phys Lett, 2014, 104(24), 242408 doi: 10.1063/1.4884203
[11]	Feng Y, Zhou T, Chen X, et al. The effect of Mn content on magnetism and half-metallicity of off-stoichiometric Co₂MnAl. JMMM, 2015, 387, 118 doi: 10.1016/j.jmmm.2015.04.002
[12]	Zhang X, Cheng Y, Zhao W, et al. Exploring potentials of perpendicular magnetic anisotropy stt-mram for cache design. IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014, 1
[13]	Meng K K, Miao J, Xu X, et al. Thickness dependence of magnetic anisotropy and intrinsic anomalous Hall effect in epitaxial Co₂MnAl film. Phys Lett A, 2017, 381(13), 1202 doi: 10.1016/j.physleta.2017.02.004
[14]	Gofryk K, Kaczorowski D, Plackowski T, et al. Magnetic and transport properties of the rare-earth-based Heusler phases R Pd Z and R Pd 2 Z (Z= Sb, Bi). Phys Rev B, 2005, 72(9), 094409 doi: 10.1103/PhysRevB.72.094409
[15]	Raquet B, Viret M, Warin P, et al. Negative high field magnetoresistance in 3d ferromagnets. Physica B, 2001, 294, 102 doi: 10.1016/S0921-4526(00)00618-9
[16]	Hordequin C, Pierre J, Currat R. Magnetic excitations in the half-metallic NiMnSb ferromagnet: From Heisenberg-type to itinerant behaviour. JMMM, 1996, 162(1), 75 doi: 10.1016/0304-8853(96)00074-1
[17]	Du Y, Xu G Z, Zhang X M, et al. Crossover of magnetoresistance in the zero-gap half-metallic Heusler alloy Fe₂CoSi . Europhys Lett, 2013, 103(3), 37011 doi: 10.1209/0295-5075/103/37011
[18]	Ishikawa Y, Shirane G, Tarvin J A, et al. Magnetic excitations in the weak itinerant ferromagnet MnSi. Phys Rev B, 1977, 16(11), 4956 doi: 10.1103/PhysRevB.16.4956
[19]	Wohlfarth E P. Very weak itinerant ferromagnets application to ZrZn₂. J Appl Phys, 1968, 39(2), 106 doi: 10.1063/1.1656163
[20]	Nagaosa N, Sinova J, Onoda S, et al. Anomalous hall effect. Rev Modern Phys, 2010, 82(2), 1539 doi: 10.1103/RevModPhys.82.1539
[21]	Tian Y, Ye L, Jin X. Proper scaling of the anomalous Hall effect. Phys Rev Lett, 2009, 103(8), 087206 doi: 10.1103/PhysRevLett.103.087206

Magneto-transport properties of the off-stoichiometric Co₂MnAl film epitaxially grown on GaAs (001)

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Magneto-transport properties of the off-stoichiometric Co₂MnAl film epitaxially grown on GaAs (001)

Magneto-transport properties of the off-stoichiometric Co₂MnAl film epitaxially grown on GaAs (001)