Device Simulation for Nanoscale MOSFET

Liu Xiaoyan; Liu Enfeng; Du Gang; Liu Yibo; Xia Zhiliang; Han Ruqi

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Article Navigation > Journal of Semiconductors > 2003 > 24(S1): 148-152

Liu Xiaoyan, Liu Enfeng, Du Gang, Liu Yibo, Xia Zhiliang, Han Ruqi. Device Simulation for Nanoscale MOSFET[J]. Journal of Semiconductors, 2003, In Press. Liu X Y, Liu E F, Du G, Liu Y B, Xia Z L, Han R Q. Device Simulation for Nanoscale MOSFET[J]. Chin. J. Semicond., 2003, 24(S1): 148.Export: BibTex EndNote

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Liu Xiaoyan, Liu Enfeng, Du Gang, Liu Yibo, Xia Zhiliang, Han Ruqi. Device Simulation for Nanoscale MOSFET[J]. Journal of Semiconductors, 2003, In Press.

Liu X Y, Liu E F, Du G, Liu Y B, Xia Z L, Han R Q. Device Simulation for Nanoscale MOSFET[J]. Chin. J. Semicond., 2003, 24(S1): 148.

Export: BibTex EndNote

Citation:

Liu Xiaoyan, Liu Enfeng, Du Gang, Liu Yibo, Xia Zhiliang, Han Ruqi. Device Simulation for Nanoscale MOSFET[J]. Journal of Semiconductors, 2003, In Press.

Liu X Y, Liu E F, Du G, Liu Y B, Xia Z L, Han R Q. Device Simulation for Nanoscale MOSFET[J]. Chin. J. Semicond., 2003, 24(S1): 148.

Export: BibTex EndNote

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Device Simulation for Nanoscale MOSFET

Institute of Microelectronics, Peking University, Beijing 100871, China,Institute of Microelectronics, Peking University, Beijing 100871, China,Institute of Microelectronics, Peking University, Beijing 100871, China,Institute of Microelectronics, Peking University, Beijing 100871, China,Institute of Microelectronics, Peking University, Beijing 100871, China and Institute of Microelectronics, Peking University, Beijing 100871, China

Received Date: 2016-03-16
Published Date: 2016-03-15

Abstract

Abstract

A novel scheme for incorporating quantum effect in classical hydrodynamic model is proposed. No additional Equations are needed to solve quantum potential with this scheme, so the complexity ofEquations is largely reduced. Based on this, a HD simulation program is developed. The 25nm gate length MOSFET and 30nm FinFET are simulated.
- nano-scale,
- semiconductor device simulation,
- hydrodynamic model,
- quantum effect

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