Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 1-5

PDF

Abstract: A new material structure with Al0.22Ga0.78As/In0.15Ga0.85As/GaAs emitter spacer layer and GaAs/In0.15Ga0.85As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated.RTDs DC characteristics are measured at room temperature. Peak to valley current ratio and the available current density for RTDs at room temperature are computed.Analysis on these results suggests that adjusting material structure and optimizing fabrication processes will be an effective means to improve the quality of RTDs.

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2414 Times PDF downloads: 1475 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Design and Realization of Resonant Tunneling Diodes with New Material Structure[J]. Journal of Semiconductors, 2005, In Press. Design and Realization of Resonant Tunneling Diodes with New Material Structure[J]. Chin. J. Semicond., 2005, 26(1): 1.Export: BibTex EndNote
      Citation:
      Design and Realization of Resonant Tunneling Diodes with New Material Structure[J]. Journal of Semiconductors, 2005, In Press.

      Design and Realization of Resonant Tunneling Diodes with New Material Structure[J]. Chin. J. Semicond., 2005, 26(1): 1.
      Export: BibTex EndNote

      Design and Realization of Resonant Tunneling Diodes with New Material Structure

      • Received Date: 2015-08-19

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return