Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 279-282

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Device Structure and Fabricating Method for SOI LIGBT/LDMOSIntegrated with Anti-ESD Diode

Zhang Haipeng, Wang Qin, Sun Lingling, Gao Mingyu, Li Wenjun, Lü Youhua, Liu Guohua and Wang Jie

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Abstract: To explore the way to realize SOI LIGBT/LDMOS devices and PIC with VLSI technology,the structure and fabricating method for the devices integrated with anti-ESD diode are presented,according to which the equivalent circuits at resistive load are given.Then the process flowchart is designed.The main factors which impact the design of parameters related to anti-ESD diode are discussed in details.At last,the requirements for process control are introduced simply.

Key words: ESD SOI LIGBT/LDMOS device structure technology PIC

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

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      Zhang Haipeng, Wang Qin, Sun Lingling, Gao Mingyu, Li Wenjun, Lü Youhua, Liu Guohua, Wang Jie. Device Structure and Fabricating Method for SOI LIGBT/LDMOSIntegrated with Anti-ESD Diode[J]. Journal of Semiconductors, 2006, In Press. Zhang H P, Wang Q, Sun L L, Gao M Y, Li W J, Lü Y, Liu G H, Wang J. Device Structure and Fabricating Method for SOI LIGBT/LDMOSIntegrated with Anti-ESD Diode[J]. Chin. J. Semicond., 2006, 27(13): 279.Export: BibTex EndNote
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      Zhang Haipeng, Wang Qin, Sun Lingling, Gao Mingyu, Li Wenjun, Lü Youhua, Liu Guohua, Wang Jie. Device Structure and Fabricating Method for SOI LIGBT/LDMOSIntegrated with Anti-ESD Diode[J]. Journal of Semiconductors, 2006, In Press.

      Zhang H P, Wang Q, Sun L L, Gao M Y, Li W J, Lü Y, Liu G H, Wang J. Device Structure and Fabricating Method for SOI LIGBT/LDMOSIntegrated with Anti-ESD Diode[J]. Chin. J. Semicond., 2006, 27(13): 279.
      Export: BibTex EndNote

      Device Structure and Fabricating Method for SOI LIGBT/LDMOSIntegrated with Anti-ESD Diode

      • Received Date: 2015-08-20

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