| Citation: |
Zhang Xingwang. Growth of Nickel Silicide Thin Films by Solid Phase Reactionand Ion Beam Synthesis[J]. Journal of Semiconductors, 2006, In Press.
Zhang X W. Growth of Nickel Silicide Thin Films by Solid Phase Reactionand Ion Beam Synthesis[J]. Chin. J. Semicond., 2006, 27(13): 131.
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Growth of Nickel Silicide Thin Films by Solid Phase Reactionand Ion Beam Synthesis
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Abstract
Nickel silicide thin films were prepared by solid phase reaction (SPR) and ion beam synthesis (IBS).The samples were characterized by using Rutherford backscattering spectrometry (RBS),X-ray diffraction (XRD),micro-Raman spectroscopy,electrical resistivity and Hall effect measurements.The structures of nickel silicide films prepared by solid phase reaction depended on the post-annealing conditions,and the nickel disilicide (NiSi2) phase was formed after a two-step annealing at 1123K,while the NiSi2 layers were obtained directly by ion beam synthesis at low temperature (523K).The temperature dependence of the sheet resistivity and the Hall mobility from 30 to 400K showed typical metallic behavior for nickel silicides prepared by SPR and peculiar peak and valley features for the NiSi2 layers synthesized by IBS. -
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