Chin. J. Semicond. > 1994, Volume 15 > Issue 12 > 809-813

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Abstract:

本文用喇曼散射方法研究了在GaAs衬底上用S-枪磁控反应溅射的AlN和PECVD淀积的SiO薄膜的界面应力,并研究了这两种薄膜在N和Ar气氛下的高温热处理对界面应力的影响.结果表明,与SiO薄膜不同,在GaAs衬底上制备的AlN薄膜,其界面应力很小,而且经N和Ar气氛下的高温快速热退火,仍具有较好的稳定性,从而表明AlN是GaAs集成电路技术中一种较好的绝缘介质、钝化层和保护材料.

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1994

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      • Received Date: 2015-08-19

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