Chin. J. Semicond. > 2007, Volume 28 > Issue 3 > 430-434
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Effects of Oxygen Source Ionization on the Growth and Properties of MOCVD ZnO Material

Li Feng, Gu Shulin, Ye Jiandong, Zhu Shunming, Zhang Rong and Zheng Youdou

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Abstract: ZnO thin films were deposited with low-pressure MOCVD at different substrate temperatures.The effects of oxygen source ionization on the growth and properties of MOCVD ZnO material were investigated.The crystal structure and surface morphology of ZnO films were characterized by X-ray diffraction and atomic force microscopy,respectively.Room temperature and low temperature photoluminescence were used to investigate the optical properties of ZnO.It was found that the ionization of the oxygen source has a marked influence on the growth rate,crystal orientation,surface morphology,and other properties

Key words: metal organic chemical vapor deposition, photoluminescence, ionization

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    Received: 18 August 2015 Revised: 17 November 2006 Online: Published: 01 March 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(3): 430-434
      Li Feng, Gu Shulin, Ye Jiandong, Zhu Shunming, Zhang Rong, Zheng Youdou. Effects of Oxygen Source Ionization on the Growth and Properties of MOCVD ZnO Material[J]. Journal of Semiconductors, 2007, In Press. Li F, Gu S L, Ye J and o N, Zhu S M, Zhang R, Zheng Y D. Effects of Oxygen Source Ionization on the Growth and Properties of MOCVD ZnO Material[J]. Chin. J. Semicond., 2007, 28(3): 430.Export: BibTex EndNote
      Citation:
      Li Feng, Gu Shulin, Ye Jiandong, Zhu Shunming, Zhang Rong, Zheng Youdou. Effects of Oxygen Source Ionization on the Growth and Properties of MOCVD ZnO Material[J]. Journal of Semiconductors, 2007, In Press.

      Li F, Gu S L, Ye J and o N, Zhu S M, Zhang R, Zheng Y D. Effects of Oxygen Source Ionization on the Growth and Properties of MOCVD ZnO Material[J]. Chin. J. Semicond., 2007, 28(3): 430.
      Export: BibTex EndNote
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      Effects of Oxygen Source Ionization on the Growth and Properties of MOCVD ZnO Material

      • Key Laboratory of Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Key Laboratory of Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-09-28
      • Revised Date: 2006-11-17
      • Published Date: 2007-03-06

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