| Citation: |
Liu Liang, Yin Junjian, Li Xiao, Zhang Haiying, Li Haiou, He Zhijing, Liu Xunchun. Ohmic Contact for InP-Based HEMTs[J]. Journal of Semiconductors, 2006, In Press.
Liu L, Yin J J, Li X, Zhang H Y, Li H O, He Z J, Liu X C. Ohmic Contact for InP-Based HEMTs[J]. Chin. J. Semicond., 2006, 27(11): 1970.
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Ohmic Contact for InP-Based HEMTs
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Abstract
An ohmic contact experiment is conducted for InP-based high electron mobility transistors (HEMTs) with two different metal structures of Ni/Ge/Au and Ni/Ge/Au/Ge/Ni/Au.Comparison is made between rapid thermal annealing (10~40s) and alloying over a long time(10min).Optimized alloying conditions for the InP-based HEMT are obtained.Using the Ni/Ge/Au/Ge/Ni/Au structure,a typical contact resistance of 0.068Ω·mm is achieved by alloying at 270℃ for 10min.-
Keywords:
- InP,
- HEMT,
- ohmic contact,
- alloy,
- TLM
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References
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Proportional views
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