| Citation: |
Yang Zhenyu, Wang Mingxiang, Wang Huaisheng. Finite Element Analysis of Temperature Distribution of Polysilicon TFTsUnder Self-Heating Stress[J]. Journal of Semiconductors, 2008, In Press.
Yang Z Y, Wang M X, Wang H S. Finite Element Analysis of Temperature Distribution of Polysilicon TFTsUnder Self-Heating Stress[J]. J. Semicond., 2008, 29(5): 954.
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Finite Element Analysis of Temperature Distribution of Polysilicon TFTsUnder Self-Heating Stress
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Abstract
The temperature distribution of typical-sized n-type polycrystalline silicon thin film transistors under self-heating (SH) stress is studied by finite element analysis. From both steady-state and transient thermal simulation, the influence of device power density,substrate material,and channel width on temperature distribution is analyzed.This study is useful for understanding the mechanism of self-heating degradation,and to find approaches to effectively alleviate the SH effect in device operation. -
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