Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 106-110
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100mm InGaP/GaAs HBT及相关电路关键工艺

石瑞英 , 孙海锋 , 刘训春 and 刘洪民

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Abstract: 对100mm In0.49Ga0.51P/GaAs HBT器件及相关电路制备中的In0.49Ga0.51P腐蚀问题、聚酰亚胺平面化、空气桥等几项关键工艺进行了研究，解决了器件及电路制备过程中出现的难题，尤其是用很简单的方法解决了In0.49Ga0.51P腐蚀过程中经常出现的腐蚀“岛”问题，并且成功地制作出所设计的器件及电路．

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(1): 106-110
      100mm InGaP/GaAs HBT及相关电路关键工艺[J]. Journal of Semiconductors, 2005, In Press. 100mm InGaP/GaAs HBT及相关电路关键工艺[J]. Chin. J. Semicond., 2005, 26(1): 106.Export: BibTex EndNote
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      100mm InGaP/GaAs HBT及相关电路关键工艺[J]. Journal of Semiconductors, 2005, In Press.

      100mm InGaP/GaAs HBT及相关电路关键工艺[J]. Chin. J. Semicond., 2005, 26(1): 106.
      Export: BibTex EndNote
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      100mm InGaP/GaAs HBT及相关电路关键工艺

      • Received Date: 2015-08-19

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