| Citation: |
Wu Huizhen, Huang Zhanchao, Lao Yanfeng. Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers[J]. Journal of Semiconductors, 2005, In Press.
Wu H Z, Huang Z C, Lao Y F. Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers[J]. Chin. J. Semicond., 2005, 26(13): 121.
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Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers
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Abstract
Gas source molecular beam epitaxy was used to grow InAsP/InGaAsP strain-compensated multiple quantum wells for 1.31μm vertical cavity surface emitting lasers on InP substrates and GaAs/AlGaAs distributed Bragg reflectors on GaAs substrates.Then the InAsP/InGaAsP strain-compensated multiple quantum wells were directly bonded to DBR grown on GaAs substrates.Physical properties,such as microstructures,luminescence emission of the bonded structures were investigated.Photoluminescence characterization showed that 500～620℃ bonding processes and following removal of InP substrates did not lower the luminescence efficiency of the MQWs.The annealing effect in the bonding process improved the crystalline quality and enhanced the luminescence efficiency.The PL intensity of the MQWs after 620℃ annealing is 3 times of the as grown samples.-
Keywords:
- GaAs/AlGaAs DBR,
- InAsP/InGaAsP MQWs,
- bonding
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References
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Proportional views
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