| Citation: |
Guo Jinxia, Ma Long, Yi Xiaoyan, Wang Liangchen, Wang Guohong, Li Jinmin. Light Extraction Efficiency of High-Power GaN-Based Light-Emitting Diodes[J]. Journal of Semiconductors, 2005, In Press.
Guo J X, Ma L, Yi X Y, Wang L C, Wang G H, Li J M. Light Extraction Efficiency of High-Power GaN-Based Light-Emitting Diodes[J]. Chin. J. Semicond., 2005, 26(13): 170.
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Light Extraction Efficiency of High-Power GaN-Based Light-Emitting Diodes
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Abstract
GaN-based LED efficiency can be improved by increasing internal quantum efficiency and increasing light extraction efficiency.Internal quantum efficiency for GaN-based blue LEDs and UVLED is more than 70% and 80%,respectively.Because only a few percents of the internal light emitted from active layer can escape out of LED mainly due to total internal reflection (TIR),there is much room for improvement of the light extraction efficiency.The main reasons for low light extraction efficiency from point of geometric and physical view are analyzed,then all kinds of methods to improve the light extraction efficiency and their advantages and disadvantages are investigated. -
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