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Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs

Yu Tongjun, Kang Xiangning, Qin Zhixin, Chen Zhizhong, Yang Zhijian, Hu Xiaodong and Zhang Guoyi

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Abstract: Photoluminescence,HR-XRD,and Raman scattering spectra of InGaN/GaN MQWs and InGaN/AlGaN on sapphire and membranes with no substrate fabricated by laser lift-off are studied.In contrast to the emission peak from the membrane samples of InGaN/GaN MQWs,which blue-shifts after annealing at 700℃,a red-shift of the PL peak position in the InGaN/AlGaN MQW membrane sample is observed,showing different strain effects in these MQWs.In Raman scattering spectra,the InGaN/GaN MQW film without sapphire substrate has a lower E2 mode frequency (567.5cm-1) than that of the films with substrate (569.1cm-1),which indicates that the compressive stress in the films is released partially when the sapphire substrate is taken off.

Key words: photoluminescence InGaN AlGaN MQWs strain

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

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      Yu Tongjun, Kang Xiangning, Qin Zhixin, Chen Zhizhong, Yang Zhijian, Hu Xiaodong, Zhang Guoyi. Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs[J]. Journal of Semiconductors, 2006, In Press. Yu T J, Kang X N, Qin Z X, Chen Z Z, Yang Z J, Hu X D, Zhang G Y. Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs[J]. Chin. J. Semicond., 2006, 27(13): 20.Export: BibTex EndNote
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      Yu Tongjun, Kang Xiangning, Qin Zhixin, Chen Zhizhong, Yang Zhijian, Hu Xiaodong, Zhang Guoyi. Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs[J]. Journal of Semiconductors, 2006, In Press.

      Yu T J, Kang X N, Qin Z X, Chen Z Z, Yang Z J, Hu X D, Zhang G Y. Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs[J]. Chin. J. Semicond., 2006, 27(13): 20.
      Export: BibTex EndNote

      Strain Effect on Photoluminescence from InGaN/GaN and InGaN/AlGaN MQWs

      • Received Date: 2015-08-20

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