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Status and Trends in Advanced SOI Devices and Materials

Wang Tianxing, Wei Hongxiang, Ren Cong, Han Xiufeng, Clifford E, Langford R M, Bari M A and Coey J M D

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Abstract: A new method of nanocontact fabrication for Adreev reflection measurement based on the nanopore method using a SiN membrane with focused ion beam technique is presented.With this method,controllable,clean,tensionless nano-contacts for spin polarization probing can be obtained.Measurements of the fabricated samples show complicated spectral structures with a zero bias anomaly and dip structures from quasipartical interactions.A control sample of Co40Fe40B20 is measured with Nb tip method.None of the measured spectra can be explained satisfactorily by present theory.Further analysis of the contact interface and a more complete theory are needed to extract a reliable spin polarization message with the point contact Andreev reflection method.

Key words: point contact Andreev reflectioncontrollablespin polarization

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2006

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      Wang Tianxing, Wei Hongxiang, Ren Cong, Han Xiufeng, Clifford E, Langford R M, Bari M A, Coey J M D. Status and Trends in Advanced SOI Devices and Materials[J]. Journal of Semiconductors, 2006, In Press. Wang T X, Wei H X, Ren C, Han X F, Clifford E, Langford R M, Ba R M A, Coey J M D. Status and Trends in Advanced SOI Devices and Materials[J]. Chin. J. Semicond., 2006, 27(4): 591.Export: BibTex EndNote
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      Wang Tianxing, Wei Hongxiang, Ren Cong, Han Xiufeng, Clifford E, Langford R M, Bari M A, Coey J M D. Status and Trends in Advanced SOI Devices and Materials[J]. Journal of Semiconductors, 2006, In Press.

      Wang T X, Wei H X, Ren C, Han X F, Clifford E, Langford R M, Ba R M A, Coey J M D. Status and Trends in Advanced SOI Devices and Materials[J]. Chin. J. Semicond., 2006, 27(4): 591.
      Export: BibTex EndNote

      Status and Trends in Advanced SOI Devices and Materials

      • Received Date: 2015-08-20

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