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Ti/4H-SiC Schottky Barrier Diodes with Field Plate and B+ Implantation Edge Termination Technology

Chen Gang, Li Zheyang, Bai Song and Ren Chunjiang

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Abstract: This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes (SBDs).The ideality factor n=1.08 and effective Schottky barrier height φ=1.05eV of the SBDs were measured with the method of forward current density-voltage (J-V).A low reverse leakage current below 5.96e-3A/cm2 at a bias voltage of -1.1kV was obtained.By using B+ implantation,an amorphous layer as the edge termination was formed.We used the PECVD SiO2 as the field plate dielectric.The SBDs have an on-state current density of 430A/cm2 at a forward voltage drop of about 4V.The specific on-resistance Ron was found to be 6.77mΩ·cm2.

Key words: 4H-SiC Schottky barrier ideal factor barrier height implantation

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    Received: 18 August 2015 Revised: 24 April 2007 Online: Published: 01 September 2007

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      Chen Gang, Li Zheyang, Bai Song, Ren Chunjiang. Ti/4H-SiC Schottky Barrier Diodes with Field Plate and B+ Implantation Edge Termination Technology[J]. Journal of Semiconductors, 2007, In Press. Chen G, Li Z Y, Bai S, Ren C J. Ti/4H-SiC Schottky Barrier Diodes with Field Plate and B+ Implantation Edge Termination Technology[J]. Chin. J. Semicond., 2007, 28(9): 1333.Export: BibTex EndNote
      Citation:
      Chen Gang, Li Zheyang, Bai Song, Ren Chunjiang. Ti/4H-SiC Schottky Barrier Diodes with Field Plate and B+ Implantation Edge Termination Technology[J]. Journal of Semiconductors, 2007, In Press.

      Chen G, Li Z Y, Bai S, Ren C J. Ti/4H-SiC Schottky Barrier Diodes with Field Plate and B+ Implantation Edge Termination Technology[J]. Chin. J. Semicond., 2007, 28(9): 1333.
      Export: BibTex EndNote

      Ti/4H-SiC Schottky Barrier Diodes with Field Plate and B+ Implantation Edge Termination Technology

      • Received Date: 2015-08-18
      • Accepted Date: 2007-03-29
      • Revised Date: 2007-04-24
      • Published Date: 2007-08-31

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