J. Semicond. > 2008, Volume 29 > Issue 6 > 1044-1047

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A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers

Gao Tongqiang, Zhang Chun, Chi Baoyong and Wang Zhihua

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Abstract: Aiming at the specific protocol of RFID technology,a 915MHz CMOS transmitter front-end for OOK modulation is implemented in a 0.18μm CMOS process.The transmitter incorporates a class-E power amplifier (PA),a modulator,and a control logic unit.The direct-conversion architecture minimizes the required on-and-off-chip components and provides a low-cost and efficient solution.A novel structure is proposed to provide the modulation depth of 100% and 18%,respectively.The PA presents an output 1dB power of 17.6dBm while maintaining a maximum PAE of 35.4%.

Key words: CMOSpower amplifierRFIDtransmittermodulation depth

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    Received: 18 August 2015 Revised: 14 January 2008 Online: Published: 01 June 2008

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      Gao Tongqiang, Zhang Chun, Chi Baoyong, Wang Zhihua. A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers[J]. Journal of Semiconductors, 2008, In Press. Gao T Q, Zhang C, Chi B Y, Wang Z H. A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers[J]. J. Semicond., 2008, 29(6): 1044.Export: BibTex EndNote
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      Gao Tongqiang, Zhang Chun, Chi Baoyong, Wang Zhihua. A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers[J]. Journal of Semiconductors, 2008, In Press.

      Gao T Q, Zhang C, Chi B Y, Wang Z H. A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers[J]. J. Semicond., 2008, 29(6): 1044.
      Export: BibTex EndNote

      A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers

      • Received Date: 2015-08-18
      • Accepted Date: 2007-12-12
      • Revised Date: 2008-01-14
      • Published Date: 2008-06-05

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