| Citation: |
On-State Breakdown Model for High Voltage RESURF LDMOS[J]. Journal of Semiconductors, 2005, In Press.
On-State Breakdown Model for High Voltage RESURF LDMOS[J]. Chin. J. Semicond., 2005, 26(3): 436.
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On-State Breakdown Model for High Voltage RESURF LDMOS
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Abstract
An analytical breakdown model under on-state condition for high voltage RESURF LDMOS is proposed.The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.As a result,electric field profile of n-drift in LDMOS at on-state is obtained.Based on this model,the electric SOA of LDMOS can be determined.The analytical results partially fit to our numerical (by MEDICI) and experiment results.This model is an aid to understand the device physics during on-state accurately and it also directs high voltage LDMOS design. -
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