| Citation: |
You Da, Xu Jintong, Tang Yingwen, He Zheng, Xu Yunhua, Gong Haimei. A p-GaN/Al0.35Ga0.65N/GaN Quantum-Well Ultraviolet Schottky Photodetector[J]. Journal of Semiconductors, 2006, In Press.
You D, Xu J T, Tang Y W, He Z, Xu Y H, Gong H M. A p-GaN/Al0.35Ga0.65N/GaN Quantum-Well Ultraviolet Schottky Photodetector[J]. Chin. J. Semicond., 2006, 27(10): 1861.
Export: BibTex EndNote
|
A p-GaN/Al0.35Ga0.65N/GaN Quantum-Well Ultraviolet Schottky Photodetector
-
Abstract
The fabrication and performance of a p-GaN/AlGaN/GaN Schottky photodetector are reported.Due to the polarization and Stark effects,spectral responses with a 10nm blue shift are observed.Under zero bias,the peak responsivity of the device is about 0.022A/W,and it increases to 0.19A/W under 1V reverse bias.The responsivity of the device is flat under a small forward bias,and two peaks appear at 283 and 355nm when the forward bias is increased to 1V.Based on the measurements and the polarization effect,the changes of carrier distribution are used to explain the working mechanism of this Schottky photodetector.The polarization effects can fundamentally affect the device response characteristics.Optimizing the device design and changing the bias can change the responsivity region and improve the peak responsivity of this Schottky ultraviolet photodetector.-
Keywords:
- AlGaN,
- 2DHG,
- Schottky,
- polarization effect
-
References
-
Proportional views
DownLoad: